Short-circuit protection circuit of insulated gate bipolar translator (IGBT) of high-power frequency conversion device

A short-circuit protection circuit, frequency conversion device technology, applied in emergency protection circuit devices, protection against overcurrent, electrical components, etc. performance, improved reliability, and low cost

Active Publication Date: 2013-12-25
HANGZHOU RIDING CONTROL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of the existing high-power frequency conversion device IGBT short-circuit protection circuit that cannot take into account both protection function and cost, the present invention provides a high-power frequency conversion device IGBT short-circuit protection circuit with simple circuit, low cost and high reliability

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  • Short-circuit protection circuit of insulated gate bipolar translator (IGBT) of high-power frequency conversion device
  • Short-circuit protection circuit of insulated gate bipolar translator (IGBT) of high-power frequency conversion device

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the drawings.

[0020] Reference figure 2 , An IGBT short-circuit protection circuit for a high-power frequency conversion device, comprising an isolation drive circuit, the input end of the isolation drive circuit is connected to a PWM control signal source, and the isolation drive circuit includes a first isolation drive chip U01, a seventh resistor R07, The second diode D02, the third resistor R03, the first transistor Q01, the fifth resistor R05, and the sixth resistor R06. The output terminal of the first driving chip U01 is connected to the seventh resistor R07 and the third resistor R03 , The seventh resistor R07 is connected to the cathode of the second diode D02, the anode of the second diode D02 is connected to the gate input terminal of the IGBT; the other end of the third resistor R03 is connected to the first three The base of the transistor is connected, the collector of the first tra...

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Abstract

The invention discloses a short-circuit protection circuit of an insulated gate bipolar translator (IGBT) of a high-power frequency conversion device. The short-circuit protection circuit of the IGBT comprises an isolation driving circuit, wherein an input end of the isolation driving circuit is connected with a pulse width modulation (PWM) control signal source; and the isolation driving circuit comprises a first isolation driving chip U01, a seventh resistor R07, a second diode D02, a third resistor R03, a first triode Q01, a fifth resistor R05 and a sixth resistor R06. The short-circuit protection circuit of the IGBT also comprises a short-circuit detection circuit, wherein the short-circuit detection circuit comprises a first resistor R01, a second resistor R02, a first capacitor C01, a first diode D01, a comparator chip U02, a fourth resistor R04 and a second triode Q02. The short-circuit protection circuit of the IGBT of the high-power frequency conversion device is simple in circuit, relatively lower in cost and high in reliability.

Description

Technical field [0001] The invention relates to a high-power frequency conversion device, in particular to an IGBT short-circuit protection circuit of a high-power frequency conversion device. Background technique [0002] At present, single-tube IGBTs or IGBT modules are mostly used as the main components of the inverter circuit in high-power frequency conversion devices (frequency converters, servo controllers). Therefore, IGBT drive and protection have become the key to reliable operation of high-power frequency conversion devices. At present, IGBT drives of high-power frequency conversion devices mostly use circuits without short-circuit protection function or IGBT short-circuit protection module chips. Frequency conversion devices without short-circuit protection function mostly use IGBT driver chips such as HCPL-3120, FOD3120, ACPL-332, etc. The driver chip integrates a photoelectric isolation circuit and a power amplifier circuit, and is directly connected to the gate resi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H7/10H02H3/08
Inventor 胡觉远罗欣吕晓东徐琳
Owner HANGZHOU RIDING CONTROL TECH
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