Passive mixer bias circuit capable of following threshold voltage of MOS (metal oxide semiconductor) transistor
A technology of MOS transistor and passive mixer, applied in the field of passive mixer bias circuit, can solve the problem that the performance of passive mixer device varies greatly, receiver sensitivity, intermodulation and other characteristics are unstable and function failure. And other issues
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0031] According to the claims of the present invention and the content disclosed in the summary of the invention, the technical solution of the present invention is specifically as follows:
[0032] see figure 1 As shown, in a passive mixer bias circuit capable of following the threshold voltage of a MOS transistor, the bias circuit 100 shown in the figure includes a threshold voltage self-bias reference circuit 110 for generating a reference current I 0 , the threshold voltage self-bias reference circuit 110 has a third transistor M that constitutes a current mirror 2 , the fourth transistor M 3 , and further includes a first transistor M 0 , the second transistor M 1 and the first resistor R 0 , where, flowing through the fourth transistor M 3 The reference current I 0 It will act on the threshold voltage following unit 120 referred to below. The transistors involved in the threshold voltage self-biasing reference circuit 110 include CMOS transistors fabricated using...
PUM

Abstract
Description
Claims
Application Information

- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com