Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A process for preparing high-efficiency all-back-electrode n-type solar cells by co-diffusion of boron and phosphorus

A technology of full back electrodes and solar cells, applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problems of cumbersome preparation process, many process influencing factors, and no profit advantage, so as to improve performance and reduce impact Effect

Inactive Publication Date: 2011-12-14
ALTUSVIA ENERGY TAICANG
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this preparation process is still relatively cumbersome, and there are many factors affecting the process, and compared with the current conversion efficiency of p-type solar cells of 18.0~18.5%, there is not much profit advantage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A process for preparing high-efficiency all-back-electrode n-type solar cells by co-diffusion of boron and phosphorus
  • A process for preparing high-efficiency all-back-electrode n-type solar cells by co-diffusion of boron and phosphorus
  • A process for preparing high-efficiency all-back-electrode n-type solar cells by co-diffusion of boron and phosphorus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The front field of the high-efficiency full-back electrode n-type solar cell is a phosphorus-doped structure.

[0023] like figure 1 Shown: a process for preparing high-efficiency full-back electrode n-type solar cells by boron-phosphorus co-diffusion, comprising the following steps:

[0024] 1. Using n-type silicon wafers with a bulk minority carrier lifetime greater than 100μs and a resistivity of 0.5~15.0Ωcm, chemical etching to remove the surface damage layer and texturing;

[0025] 2. Screen printing boron paste in the back emitter area, drying at 100~500℃ for 5~30min;

[0026] 3. Cover the boron paste with another diffusion barrier layer, and dry at 100~500℃ for 5~30min;

[0027] 4. Screen printing the phosphor paste in the contact area of ​​the base area on the back, drying at 100~500℃ for 5~30min;

[0028] 5. Diffusion at high temperature; at 880~1100℃, first diffuse for 10~60min, then cool down to 800~950℃, and then pour POCl 3 source for phosphorus di...

Embodiment 2

[0034] The front field of the high-efficiency full-back electrode n-type solar cell is a boron-doped suspended junction structure.

[0035] like figure 2 Shown: a process for preparing high-efficiency full-back electrode n-type solar cells by boron-phosphorus co-diffusion, comprising the following steps:

[0036] 1. Using n-type silicon wafers with a bulk minority carrier lifetime greater than 100μs and a resistivity of 0.5~15.0Ωcm, chemical etching to remove the surface damage layer and texturing;

[0037] 2. Screen printing the phosphor paste in the contact area of ​​the base area on the back, drying at 100~500℃ for 5~30min;

[0038] 3. Cover the phosphorous slurry with another diffusion barrier layer, and dry at 100~500℃ for 5~30min;

[0039] 4. Screen printing boron paste in the contact area of ​​the backside emitter, drying at 100~500℃ for 5~30min;

[0040] 5. Diffusion at high temperature, feeding BBr at 880~1100℃ 3 The source is co-diffused with boron and phos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a process for preparing high-efficiency full-back electrode n-type solar cells by co-diffusion of boron and phosphorus. ~30min; cover a layer of diffusion barrier layer on the boron paste or phosphor paste, dry at 100~500°C for 5~30min; screen print phosphor paste on the contact area of ​​the base area on the back, dry at 100~500°C for 5 minutes ~30min; high temperature diffusion; first diffuse at 880~1100°C for 10~60min, then cool down to 800~950°C, then feed POCl3 source for phosphorus diffusion for 10~60min; removal of BSG, PSG and barrier layer; double-sided Passivation; open the window on the back film; prepare electrodes.

Description

technical field [0001] The invention relates to the field of photovoltaic power generation, in particular to a process for preparing a high-efficiency full-back electrode n-type solar cell by utilizing boron-phosphorus co-diffusion. Background technique [0002] High efficiency and low cost are the two goals pursued by the photovoltaic industry, and n-type cells have received more and more attention due to their high minority carrier lifetime and low attenuation characteristics. At present, the only commercial high-efficiency cells with efficiencies over 20.0% are Sunpower's full-back electrode solar cells and Sanyo's HIT heterojunction cells, with the highest efficiencies reaching 24.2% and 23.0%, respectively. Sunpower's all-back electrode solar cells use multiple high-temperature diffusion, high-temperature oxidation, masking, chemical etching and other processes to form phosphorus front field, boron back emitter and local boron heavily doped contact window. The process i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陶龙忠董经兵杨灼坚夏正月李晓强宋文涛高艳涛卢建刚邢国强
Owner ALTUSVIA ENERGY TAICANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com