Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method

A technology of LED packaging and packaging method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large attenuation, high cost, and short life, and achieve the effect of reducing thermal resistance and improving life

Active Publication Date: 2013-04-10
FOSHAN BLUE ROCKET ELECTRONICS
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a high-power LED packaging structure and packaging method thereof, which can solve the problems of poor thermal conductivity, large thermal resistance, poor stress resistance, large attenuation, high cost, short life and problems in the prior art. Problems such as poor quality caused by solder paste production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Below in conjunction with embodiment, the present invention is described in detail.

[0018] First of all, analyze the heat conduction problem in the existing technology. The medium between the chip and the bracket of the existing LED is silver glue or white glue, and there is also a eutectic method. The thermal conductivity of the silver glue is generally 2- 3W / mk, the ultra-precious silver glue with special process can only reach 20-30W / mk; the thermal conductivity of white glue does not exceed 3W / mk; the eutectic method, because the required temperature reaches above 350 degrees, is reliable for product quality There is a certain threat, and at the same time, the eutectic produces a lot of internal stress, and there is no buffer between the chip and the frame, and the chip is easily damaged by stress. In this regard, the present invention will use solder for crystal bonding, the thermal conductivity reaches above 50W / mk, the bonding force is much greater than that of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-power LED encapsulating structure, which is characterized by having a welding flux die bonding structure, wherein a welding flux is a low-temperature lead-free welding flux. The high-power LED encapsulating structure has the advantages of high heat conductivity, long service life, energy saving and environmental friendliness. By adopting the high-power LED encapsulating structure, the problems of low heat conducting efficiency, high heat resistance, poor stress resistance, high attenuation, over high cost, short service life and the like existing in the prior art can be solved.

Description

technical field [0001] The invention relates to a high-power LED packaging structure and a packaging method thereof, in particular to a high-power LED packaging structure with a metal layer at the bottom of the bracket and a packaging method thereof. Background technique [0002] With the continuous development of the industry, the luminous efficiency of high-power LEDs is getting higher and higher, and the luminous flux is also getting higher and higher. However, how to quickly dissipate the heat generated by the LED chip and reduce the thermal resistance between the chip and the frame has not been better in the industry so far. solution. In the existing high-power LED manufacturing, silver glue and white glue are mostly used as the die-bonding glue of the chip, so the thermal conductivity of the two materials is poor, and the thermal resistance after die-bonding is relatively large, so that under long-term use, Easy to change color and poor thermal conductivity, the resul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/64H01L33/00
Inventor 李邵立雒继军
Owner FOSHAN BLUE ROCKET ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com