Method for predicting service life of hot carrier of silicon on insulator (SOI) device

Abstract

The invention discloses a method for predicting the service life of a hot carrier of a silicon on insulator (SOI) device. The method comprises the following steps: 1, extracting the thermal resistance of the silicon on insulator device; 2, testing drain current of the silicon on insulator device under a stress condition, calculating the power of the silicon on insulator device under the stress condition, and calculating the actual temperature of the silicon on insulator device by utilizing the extracted thermal resistance; 3, performing an accelerated stress test on the silicon on insulator device; and 4, predicting the service life of the hot carrier of the silicon on insulator device. By utilizing the method, accurate prediction on the service life of the hot carrier on the silicon on insulator device is realized.

Description

technical field [0001] The invention relates to the technical field of reliability of integrated circuits, in particular to a method for predicting the hot carrier lifetime of a silicon-on-insulator (SOI) device. The so-called device hot carrier lifetime is the drain current I dsat The time it takes to degenerate by 10%. Background technique [0002] The hot carrier damage of MOSFET is caused by the rapid reduction of MOS device size in recent years and the relatively stable working voltage, which makes the electric field intensity and lateral electric field of the gate oxide layer of the MOS device in the working state increasing. Hot carrier damage has become one of the key factors affecting the reliability of MOS devices. As the feature size of the device decreases, the lateral electric field increases. When the device works in the saturation region, the electrons in the high field region obtain higher energy and become high-energy electrons. When the energy of the elect...

AI Technical Summary

Problems solved by technology

For SOI devices, due to the existence of self-heating effect, the actual temperature of the device will rise during accelerated stress experiments, but in actual circuit applications, due to the high frequency, there is basically no self-heating effect

Therefore, if the accelerated stress experimental data at room temperature is used to predict the hot carrier lifetime at room temperature, it is not accurate, and there may even be a big difference

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