Method for preparing silicon-nanoparticle-containing silicon nitride thin films
A silicon nitride film and silicon nanoparticle technology, which is applied in the fields of final product manufacturing, gaseous chemical plating, sustainable manufacturing/processing, etc., can solve the problems of small interval difference, difficult formation, and large attenuation length of electronic wave function
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example 1
[0018] In the example of the present invention, a non-stoichiometric silicon nitride film is prepared by plasma-enhanced chemical vapor deposition technology, and then silicon nanoparticles with small size, high order and strong quantum confinement effect are prepared by thermal annealing at 800°C. Specifically include the following steps:
[0019] (1) Cleaning the P-type monocrystalline silicon wafer;
[0020] (2) A non-stoichiometric silicon nitride film is prepared on a substrate by plasma-enhanced chemical vapor deposition; the gas and its flow rate are as follows: 10% SiH diluted with hydrogen 4 : 50sccm, purity 99.999% NH 3 : 50sccm, RF power: 80W, RF frequency: 13.56MHz, substrate temperature: 200℃, coating time: 40 minutes;
[0021] (3) Carry out high-temperature annealing treatment to the prepared non-stoichiometric silicon nitride film; the annealing method is: before heating up, fill the quartz tube annealing furnace with a purity of 99.999% nitrogen and keep it f...
example 2
[0023] (1) Cleaning the P-type monocrystalline silicon wafer;
[0024] (2) A non-stoichiometric silicon nitride film is prepared on a substrate by plasma-enhanced chemical vapor deposition; the gas and its flow rate are as follows: 10% SiH diluted with hydrogen 4 : 50sccm, purity 99.999% NH 3 : 60sccm, RF power: 80W, RF frequency: 13.56MHz, substrate temperature: 200℃, coating time: 40 minutes;
[0025] (3) Carry out high-temperature annealing treatment to the prepared non-stoichiometric silicon nitride film; the annealing method is: before heating up, fill the quartz tube annealing furnace with a purity of 99.999% nitrogen and keep it for 10 minutes, and the nitrogen flow rate is: 5 sccm, place the silicon nitride film on a quartz boat and push it into the quartz furnace, directly raise the temperature to 800°C in a nitrogen atmosphere, keep it for 10 minutes, turn off the heating power supply, the silicon nitride film does not have any external cooling measures in the quart...
example 3
[0027] (1) Cleaning the P-type monocrystalline silicon wafer;
[0028] (2) A non-stoichiometric silicon nitride film is prepared on a substrate by plasma-enhanced chemical vapor deposition; the gas and its flow rate are as follows: 10% SiH diluted with hydrogen 4 : 70sccm, purity 99.999% NH 3 : 50sccm, RF power: 70W, RF frequency: 13.56MHz, substrate temperature: 220℃, coating time: 55 minutes;
[0029] (3) Carry out high-temperature annealing treatment to the prepared non-stoichiometric silicon nitride film; the annealing method is: before heating up, fill the quartz tube annealing furnace with a purity of 99.999% nitrogen and keep it for 12 minutes, and the nitrogen flow rate is: 4sccm, put the silicon nitride film on the quartz boat and push it into the quartz furnace, directly raise the temperature to 750°C under nitrogen atmosphere, keep it for 10 minutes, disconnect the heating power supply, the silicon nitride film is placed in the quartz furnace without any external c...
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