Preparation method of smooth-faced vanadium pentoxide film

A technology of vanadium pentoxide and smooth surface, which is applied in the field of preparation of vanadium pentoxide film, which can solve the problems of rough surface of the film and achieve the effect of smooth surface, low energy consumption and dense surface

Active Publication Date: 2012-10-03
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention is to solve the existing V 2 o 5 Preparation of V by melt quenching 2 o 5 The technical problem of the rough surface of the thin film, and provide a kind of preparation method of the vanadium pentoxide thin film with smooth surface

Method used

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  • Preparation method of smooth-faced vanadium pentoxide film
  • Preparation method of smooth-faced vanadium pentoxide film

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specific Embodiment approach 1

[0009] Specific embodiment one: the preparation method of a kind of vanadium pentoxide film with smooth surface of the present embodiment is carried out according to the following steps: one, by NH 3 ·H 2 O:H 2 o 2 :H 2 The volume ratio of O is 5:2:1 to NH 3 ·H 2 O, H 2 o 2 and H 2 O mixed to obtain mixed solution A, dilute H 2 SO 4 :H 2 o 2 The volume ratio is 3:1 will dilute H 2 SO 4 :H 2 o 2 Mix to obtain a mixed solution B, then place the glass substrate in the mixed solution A for 30min-35min ultrasonic vibration, and then place it in the mixed solution B for 30min-35min ultrasonic vibration, rinse the glass substrate with distilled water, and store it in a dry place. Standby in water and ethanol; 2. Press V 2 o 5 The mass volume ratio of powder to distilled water is 1g: 40mL~50mL, V 2 o 5 The mass ratio of powder to dispersant is 1:1.0~1.8 Weigh V 2 o 5 Powder, dispersant and distilled water; 3. Add the dispersant weighed in step 2 to the distilled w...

specific Embodiment approach 2

[0011] Specific embodiment two: the difference between this embodiment and specific embodiment one is: dilute H in step one 2 SO 4 Specifically, the concentration of how dilute is 15% to 20% (mass). Others are the same as in the first embodiment.

specific Embodiment approach 3

[0012] Specific embodiment three: the difference between this embodiment and specific embodiment one is: dilute H in step one 2 SO 4 Specifically how dilute the concentration is 18% (mass). Others are the same as in the first embodiment.

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Abstract

The invention provides a preparation method of a smooth-faced vanadium pentoxide film, relates to a preparation method of a vanadium pentoxide film and aims to solve the technical problem that the V2O5 film prepared by the existing V2O5 melting and quenching method has a rough surface. The preparation method comprises the following steps: melting V2O5 powder at high temperature, and pouring into water containing a dispersant agent; after the V2O5 powder is dissolved, standing to obtain a V2O5 sol; using ammonia water to regulate the pH value of the V2O5 sol to 6.5-7.5; ageing to obtain an ammonium metavanadate sol; immersing pretreated substrate glass in the ammonium metavanadate sol to carry out pulling type film formation; and drying in the air, and sintering in vacuum to obtain the smooth-faced vanadium pentoxide film. The film is smooth, flat and uniform, and can be used for ion absorption base materials, moisture sensors, micro batteries, electrochromic display materials, intelligent windows, color filters, heat radiation detection materials, optical memory materials or the like.

Description

technical field [0001] The invention relates to a method for preparing a vanadium pentoxide thin film. Background technique [0002] The application of laser in the fields of medicine, scientific research and industrial production has developed rapidly. At the same time, lasers pose a greater threat to human eyes and photoelectric sensors. In order to deal with this threat, people have done a lot of research work and explored some new laser protection technologies and protective materials. Among them, the laser protection technology based on the principle of thermal phase change has received extensive attention, and in the laser protection material based on the principle of phase change, V 2 o 5 The crystal can change from semiconductor phase to metal phase at about 257°C, and the thin film V 2 o 5 Usually an oxygen-deficient n-type semiconductor metal oxide. When V 2 o 5 When the crystal is in the semiconductor phase, the band gap is 2.24ev, and it has a negative te...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08
Inventor 吴晓宏秦伟宗薇
Owner HARBIN INST OF TECH
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