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Method for controlling growing lengths of silicon nanowires

A technology of silicon nanowires and silicon wafers, which is applied in the field of nanomaterial preparation, can solve the problems such as difficulty in forming silicon nanowires with large aspect ratios, and achieve the effects of low cost, simple and reliable process, and short growth time

Inactive Publication Date: 2011-09-14
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a simple method for controlling the growth length of silicon nanowires by heating in a water bath in order to solve the problems existing in the preparation of silicon nanowires by wet etching. Problems in the Generation of Silicon Nanowires with Large Aspect Ratio

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  • Method for controlling growing lengths of silicon nanowires
  • Method for controlling growing lengths of silicon nanowires

Examples

Experimental program
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Effect test

Embodiment 1

[0017] a. Take an N-type 100-crystal double-sided polished silicon wafer with a size of 0.5×0.5cm, and use the RCA standard cleaning process to clean it;

[0018] b. Weighing AgNO 3 0.595g, dissolve it in 50ml deionized water, and ultrasonically oscillate to make it fully dissolved to obtain a silver nitrate solution; the configured silver nitrate solution and the hydrofluoric acid solution with a concentration of 40% are in a volume ratio of 1:1 Mix evenly to obtain 100ml of etchant;

[0019] c. Set the temperature of the water bath to 20°C, put the plastic reactor containing the above-mentioned etchant solution into the water bath, and put the cleaned double-sided polished silicon wafer into the plastic reactor when the temperature is stable;

[0020] d. Take it out after reacting for 1 hour, put it into a nitric acid solution with a concentration of 65-68% and react for 30 seconds, remove the silver on the surface of the silicon wafer, then wash it with deionized water, d...

Embodiment 2

[0022] a. Take N-type 100 crystal orientation, double-sided polished silicon wafer with a size of 1×1cm, and use RCA standard cleaning process for cleaning;

[0023] b. Weighing AgNO 3 0.595g, dissolve it in 50ml deionized water, and ultrasonically oscillate to make it fully dissolved to obtain a silver nitrate solution; the configured silver nitrate solution and the hydrofluoric acid solution with a concentration of 40% are in a volume ratio of 1:1 Mix evenly to obtain 100ml of etchant;

[0024] c. Set the temperature of the water bath to 30°C, put the plastic reactor containing the above-mentioned etchant solution into the water bath, and put the cleaned double-sided polished silicon wafer into the plastic reactor when the temperature is stable;

[0025] d. Take it out after reacting for 1 hour, put it into a nitric acid solution with a concentration of 65-68% and react for 30 seconds, remove the silver on the surface of the silicon wafer, then wash it with deionized water...

Embodiment 3

[0027] a. Take an N-type 100-crystal double-sided polished silicon wafer with a size of 0.7×0.7cm, and use the RCA standard cleaning process for cleaning;

[0028] b. Weighing AgNO 3 0.595g, dissolve it in 50ml deionized water, and ultrasonically oscillate to make it fully dissolved to obtain a silver nitrate solution; the configured silver nitrate solution and the hydrofluoric acid solution with a concentration of 40% are in a volume ratio of 1:1 Mix evenly to obtain 100ml of etchant;

[0029] c. Set the temperature of the water bath to 40°C, put the plastic reactor containing the above-mentioned etchant solution into the water bath, and put the cleaned double-sided polished silicon wafer into the plastic reactor when the temperature is stable ;

[0030] d. Take it out after reacting for 1 hour, put it into a nitric acid solution with a concentration of 65-68% and react for 30 seconds, remove the silver on the surface of the silicon wafer, then wash it with deionized water...

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Abstract

The invention discloses a method for controlling growing lengths of silicon nanowires. According to the method, a water bath kettle is used for heating so as to control a growing temperature of the silicon nanowires and the growing lengths of the nanowires are controlled by controlling the temperature, and thus, the problem that in the prior art for preparing the silicon nanowires by a wet etching process, the silicon nanowires with large length-width ratios are difficult to generate is solved. The method disclosed by the invention has simple and reliable process and low cost, can be used for batch production and lays a foundation for preparing a nano device on the basis of the silicon nanowires with different length-width ratios.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for controlling the growth length of silicon nanowires by heating in a water bath. Background technique [0002] In recent decades, the preparation, characterization and application of low-dimensional nanostructure materials have attracted great attention, and silicon nanowire materials are especially because of their compatibility with traditional integrated circuit processes and their superiority compared with bulk silicon materials. It exhibits unique optical and electrical properties such as quantum confinement effect, quantum tunneling effect, Coulomb blocking effect, and high surface activity. It has become one of the most ideal materials for preparing micro-nano electronic devices and is a hot research issue in the field of nanotechnology. . [0003] When one-dimensional silicon nanowires are used to prepare electronic devices, the aspect ratio o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06C30B29/62C23F1/24
Inventor 刘艳丽王志亮陈云马殿飞刘春冉侯慧娜于江江郑小东张健
Owner EAST CHINA NORMAL UNIV
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