Method and equipment for heating semiconductor device

Abstract

The invention discloses a method for heating a semiconductor device, which adopts an electric heating element to heat the semiconductor device requiring to be heated on a PCB (printed circuit board), wherein the electric heating element firstly heats a base on the PCB, and then the base transfers the heat to the semiconductor device. In the heating method provided by the invention, the electric heating element heats the base of the PCB, then the base transfers the heat to the semiconductor device, thus the system temperature rise is uniform, the temperature difference between the upper surface and the lower surface of the semiconductor device is relative small, and the welding foot is not subjected to stress deformation and other adverse effects; and when the semiconductor device operates normally, the radiation can not be influenced. The invention also discloses a device for heating the semiconductor device at the same time.

Description

technical field [0001] The invention relates to heating of semiconductor devices, in particular to a heating method and device for semiconductor devices. Background technique [0002] Existing semiconductor devices can be divided into military grade, industrial grade and commercial grade according to the normal operating temperature range. The applicable temperature ranges of the three grades of semiconductor devices are -40°C to +125°C and -40°C to +100°C respectively. and 0℃~+85℃. Most equipment manufacturers generally choose commercial-grade semiconductor devices to reduce costs. In order to ensure that commercial-grade semiconductor devices can start normally at low temperatures, the usual method is to heat the semiconductor device to reach the temperature required for its start-up. At present, there are two common heating methods for semiconductor devices as follows. [0003] One is to heat the semiconductor device through the heat radiation of the heating plate. This...

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Problems solved by technology

[0003] One is to heat the semiconductor device through the heat radiation of the heating plate. This heating technology has the following defects: the semiconductor device facing the heating plate can be directly heated by heat radiation, while the semiconductor device facing away from the heating plate can only wait for the heating plate to be heated. Air, the air is heated and then heats the semiconductor device. Therefore, this heating technology has a better heating effect when the semiconductor device is mounted on the front, but the heating effect is not ideal when the semiconductor device is mounted on the back. The semiconductor device needs to be raised to the starting temperature. relatively long time; moreover, heating plate cost is relatively high

This heating method has the following disadvantages: (1) Since only the surface of the semiconductor device is heated, the temperature on the surface of the semiconductor device is high and the temperature on the bottom surface is low, resulting in a large temperature difference between the surface and the bottom surface of the semiconductor device, resulting in stress deformation of the solder fillets , so as to destroy the connection between the semiconductor device and the digital board, so the reliability is not high; (2) Although the surface temperature of the semiconductor device can be quickly raised to the starting temperature by using this heating method, it needs to dissipate heat when the semiconductor device is working normally, and the heating body If it is installed on the surface of the semiconductor device, the semiconductor device will only be in contact with the heating body, but not with the heat dissipation teeth, so the heat dissipated is very limited, and it is difficult to meet the heat dissipation requirements, especially for semiconductor devices mounted on the back.

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