Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Apparatus and method for manufacturing ingot

A technology of ingots and equipment, applied in chemical instruments and methods, self-solidification methods, self-melting liquid extraction methods, etc., can solve the problems of polysilicon ingot quality degradation and other problems, and achieve excellent crystal orientation, particle size increase, inhibition The effect of heat loss

Inactive Publication Date: 2011-07-20
AVACO
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, since the solidification interface protrudes upward, the crystals of the polycrystalline silicon ingot are partially inclined without being uniformly formed in the vertical direction, and thus, the quality of the polycrystalline silicon ingot is degraded.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for manufacturing ingot
  • Apparatus and method for manufacturing ingot
  • Apparatus and method for manufacturing ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of each element may be exaggerated for clarity of illustration, and the size of each element may be different from the actual size of each element. Like reference numerals refer to like elements throughout. Polycrystalline silicon ingots were produced according to the following examples, but the present invention is not limited thereto, and thus various ingots can be produced within the scope of the present invention.

[0046] figure 1 is a cross-sectional view illustrating an apparatus for manufacturing a polysilicon ingot according ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to an apparatus and a method for manufacturing an ingot. The apparatus for manufacturing an ingot according to the present invention includes a crucible for containing a raw material, a heating means for heating the crucible, a support for supporting the crucible, a heat insulation member arranged outside the heating means and spaced apart from the support, and a rotatable cooling means arranged below the support for supporting the crucible. According to the present invention, the cooling of the rotating cooling means is transferred not only to the lower portion of the crucible but also to the side portion of the crucible through the space formed between the lower portion of the heat insulation member and the support such that the molten silicon is solidifiedsimultaneously at the center thereof and at a side portion thereof, thereby manufacturing a silicon ingot having excellent crystal directivity.

Description

technical field [0001] The present invention relates to an apparatus and method for manufacturing an ingot, and more particularly, to an ingot capable of suppressing heat loss and having the same solidification speed in the center of the ingot and in its side portions. Apparatus and methods for making ingots. Background technique [0002] As attention to environmental issues and energy depletion is increasing recently, attention to solar cells (solar cells) as an abundant and eco-friendly alternative energy source with high energy efficiency is also increasing. Solar cells are classified into crystalline solar cells, amorphous solar cells, and compound solar cells according to their source materials. Crystalline silicon solar cells are in particular widely used today. [0003] Crystalline silicon solar cells are classified into monocrystalline silicon solar cells and polycrystalline silicon solar cells. Due to the high quality of the substrate of monocrystalline silicon s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10
CPCC30B29/06C01B33/021C30B11/003Y02E10/50
Inventor 都镇永权赫大高桢翊梁熙哲李仁河朴完雨金奉哲
Owner AVACO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products