Square electromagnetic cold crucible for continuous melting and organizational control of polycrystalline silicon
An electromagnetic cold crucible and polysilicon technology, which is applied to the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of poor structure control effect, silicon ingots stuck in the crucible cavity, and large crucible loss, etc. Improve power utilization, eliminate poor induction melting or induction melting termination, low-cost melting and freezing effects
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specific Embodiment approach 2
[0008] Specific implementation mode two: as Figure 1-4 As shown, the insulating sealing material layer 10 of a square electromagnetic cold crucible for continuous melting and structure control of polysilicon in this embodiment is an insulating sealing material layer 10 made of natural mica sheet and epoxy resin. Due to the high melting point of natural mica, it does not melt during use and plays a good insulating role between different parts. At the same time, the use of epoxy resin makes the outer wall of the crucible and the coil have a good insulating effect. Other components and connections are the same as those in the first embodiment.
specific Embodiment approach 3
[0009] Specific implementation mode three: as Figure 1-4 As shown, the thin water pipe 4 and the water inlet pipe 2, the thin water pipe 4 and the water outlet pipe 3, the thin water pipe 4 and the lower half of the crucible main body 1 of a square electromagnetic cold crucible for continuous melting and tissue control of polysilicon described in this embodiment Both bodies 1-2 are connected by welding. The connection method described in this embodiment has a small amount of welding, a large amount of water passing through, and a better cooling effect. Other components and connections are the same as those in the first embodiment.
[0010] Specific implementation mode four: as Figure 1-4 As shown, the length L of the crucible main body 1 of a square electromagnetic cold crucible for continuous melting and structure control of polysilicon described in this embodiment is 80 mm to 100 mm, and the width (W) of the crucible main body 1 is 80 mm to 100 mm. The height H of the c...
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