Micron sensing element, and preparation method and application thereof
A technology of sensing elements and matrix materials, applied in optical elements, microstructure technology, microstructure devices, etc., can solve the problems of late health monitoring research, achieve simple and easy preparation methods, improve monitoring accuracy, and reduce energy consumption Effect
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Embodiment 1
[0032] The surface of pure aluminum or aluminum alloy after anodic oxidation treatment is degreased, the sensor element template is adapted and fixed to the base material after anodic oxidation treatment, ultrasonically cleaned in trichlorethylene organic solvent for 5 minutes, and then installed on the card Put it into the vacuum chamber of the ion coating equipment, after vacuuming to 0.005Pa, pass the working gas argon into the vacuum chamber to a pressure of about 2Pa, apply a negative bias voltage of about 600 volts to the workpiece, and perform ion bombardment cleaning for 10 minutes; The evaporation source beam current is 50A, the workpiece is negatively biased at about 40 volts, and the copper film is deposited for 120 minutes, thus depositing a micron sensor element. The micron sensing element is composed of an insulating layer on the surface of the substrate 1 and a copper conductive film 2 deposited on the insulating layer. The thickness of the micron sensing element...
Embodiment 2
[0039] The difference from Example 1 is:
[0040] The surface of pure aluminum or aluminum alloy after anodic oxidation treatment is degreased, the sensor element template is adapted and fixed with the anodized base material, ultrasonically cleaned in trichlorethylene organic solvent for 10 minutes, and then installed on the card Put it on the tool and put it into the vacuum chamber of the ion coating equipment. After evacuating to 0.013Pa, pass the working gas argon into the vacuum chamber to a pressure of about 5Pa, apply a negative bias voltage of about 500 volts to the workpiece, and perform ion bombardment cleaning for 8 minutes; evaporate The source beam current is 80A, the workpiece is negatively biased at about 80 volts, and the copper film is deposited for 80 minutes, thereby depositing a micron sensing element. In this embodiment, the thickness of the micrometer sensing element is about 20 micrometers, and the width is about 10 millimeters.
[0041] In this embodime...
Embodiment 3
[0043] The difference from Example 1 is:
[0044] Remove oil stains on the surface of pure aluminum or aluminum alloy after anodic oxidation treatment, adapt and fix the sensor element template with the anodized substrate material, ultrasonically clean it in trichlorethylene organic solvent for 8 minutes, and then install the card on the card Put it on the tool and put it into the vacuum chamber of the ion coating equipment. After evacuating to 0.008Pa, pass the working gas argon into the vacuum chamber to a pressure of about 3Pa, apply a negative bias voltage of about 400 volts to the workpiece, and perform ion bombardment cleaning for 8 minutes; evaporate The source beam is 60A, the workpiece is negatively biased at about 60 volts, and the copper film is deposited for 40 minutes, thereby depositing a micron sensing element. In this embodiment, the thickness of the micrometer sensing element is about 8 micrometers, and the width is about 2 millimeters.
[0045] In this embod...
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