Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

I/O (input/output)pin allotting method for nano CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit structure

A technology of circuit structure and distribution method, applied in circuits, electrical components, electrical digital data processing, etc., can solve problems such as skyrocketing manufacturing costs, hindering signal integrity, and serious wiring crosstalk.

Inactive Publication Date: 2011-06-22
NINGBO UNIV
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the further narrowing of the line width of integrated circuits, silicon-based microelectronics technology will encounter many insurmountable challenges: (1) The difficulty of controlling line width through photolithography has increased sharply, which has far exceeded the current manufacturing level, making the development of corresponding Tool manufacturing costs skyrocket
(2) The quantum effect makes the crosstalk between the wires increasingly serious, hindering the integrity of the signal
However, the I / O pins are located at the outermost periphery of the CMOL circuit structure, and the actual connected domain size cannot reach or even be much smaller than the theoretical value, such as image 3 The example CMOL unit B shown,

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • I/O (input/output)pin allotting method for nano CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit structure
  • I/O (input/output)pin allotting method for nano CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit structure
  • I/O (input/output)pin allotting method for nano CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment one: step 1.: define the circuit netlist and include I / O pin, logic gate unit and interconnection line, take as Figure 6 The netlist of the input circuit based on the NOR gate is shown, and the I pin and the O pin in the input circuit netlist are saved separately to the collection , in, then , , the total number of I / O pins is , save the logic gate units in the input circuit netlist to the set G, then , the number of logic gate units is ;

[0040] Step ②: Define the nano-CMOS circuit structure as a two-dimensional cell array , whose size is , the horizontal coordinates are , the vertical coordinate is ,in is a nano-CMOS unit, that is, the number of nano-CMOS units ; The outermost nano-CMOS unit of the two-dimensional cell array is an I / O pin allocation area, and the remaining nano-CMOS cells of the two-dimensional cell array are logic gate cell allocation areas; in the formula (2) is the redundant control parameter, The value is 2...

Embodiment 2

[0045] Step ①: Define the circuit netlist including I / O pins, logic gate units and interconnection lines, such as Figure 9 The netlist of the input circuit based on the NOR gate is shown, and the I pin and the O pin in the input circuit netlist are saved separately to the collection , in, then , , the total number of I / O pins is . Save the logic gate units in the input circuit netlist to the set G, , the number of logic gates is ;

[0046] Step ②: Define the nano-CMOS circuit structure as a two-dimensional cell array , whose size is , the horizontal coordinates are , the vertical coordinate is ,in is a nano-CMOS unit, that is, the number of nano-CMOS units ; The outermost nano-CMOS unit of the two-dimensional cell array is an I / O pin allocation area, and the remaining nano-CMOS cells of the two-dimensional cell array are logic gate cell allocation areas; in the formula (2) is the redundant control parameter, The value is 40; according to formulas ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an I / O (input / output)pin allotting method for a nano CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit structure; the method provided by the invention has the advantages of capable of effectively solving the limited I / O pin allotting communication area of the nano CMOS circuit structure, and reducing complexity of the whole circuit. The method comprises the following steps: a fan-out degree of an input pin I is analyzed, when the fan-out degree is larger than one threshold value Dout(T), the communication area is expanded by logically copying; a fan-in degree of an output pin O is analyzed, when the fan-in degree is larger than one threshold value Din(T), the communication area is expanded by inserting a pair of inverter sets so as to ease the allotting difficulty caused by high fan-out / fan-in of the I / O pin in the circuit. The test proves that the method provided by the invention can effectively solve the problem of difficultly allotting the I / O pin of the nano CMOS circuit structure.

Description

technical field [0001] The invention relates to an automatic design method for a nanometer CMOS circuit structure, in particular to an I / O pin assignment method for a nanometer CMOS circuit structure. Background technique [0002] At present, the large-scale production technology of silicon-based integrated circuits has reached the 0.09~0.065 micron process, and will further reach 0.045 micron or even reach the nanometer level. With the further narrowing of the line width of integrated circuits, silicon-based microelectronics technology will encounter many insurmountable challenges: (1) The difficulty of controlling line width through photolithography has increased sharply, which has far exceeded the current manufacturing level, making the development of corresponding The cost of manufacturing tools skyrocketed. (2) The quantum effect makes the crosstalk between the wires increasingly serious, hindering the integrity of the signal. For these reasons, silicon-based microele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F17/50H01L21/60
Inventor 夏银水储著飞王伦耀
Owner NINGBO UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com