Method for manufacturing silicon-penetrating coaxial line for microwave frequency band
A microwave frequency, coaxial line technology, applied in the field of high-density packaging, can solve the problems of lithography capability and lithography accuracy limitations, coaxial line difficulties, etc., achieve small mechanical and physical damage, smooth inner wall of through holes, and ensure accuracy Effect
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[0024] Embodiments of the present invention will be further specifically described below with reference to the accompanying drawings (6×6 array) in order to fully demonstrate the advantages and positive effects of the present invention. The scope of the present invention is not limited to the following examples.
[0025] exist figure 1 In the silicon chip "1" 101, a 6×6 array of coaxial lines is distributed on the A side, and the coaxial line holes 102 are formed by deep reactive ion etching (DRIE) process.
[0026] exist figure 2 In the above, the photosensitive BCB layer 203 is coated on the A side of the silicon wafer "2" 201, and the coaxial line pattern 204 is formed after photolithography.
[0027] image 3 The structure of the coaxial line 301 passing through the silicon wafer "1" 101 is formed after all processes such as bonding, electroplating and polishing are completed.
[0028] Fig. 4 is a process flow chart of the high-density through-silicon coaxial line.
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