Bending and forming method of thin silicon wafer

Abstract

The invention discloses a bending and forming method of a thin silicon wafer, which scans the thin silicon wafer by utilizing Nd:YAG pulse laser and provides power and temperature conditions for bending the thin silicon wafer by thermal action of laser and a thin silicon wafer material. In the bending and forming method, extra temperature environment does not need to be provided in the stage of laser scanning, the bending and forming mainly utilize the thermal action of the laser and the thin silicon wafer material to realize the plastic characteristic of the silicon wafer, and further are realized by stress difference generated by different temperatures on the upper surface and the lower surface. In the bending and forming method, 1064nm pulse laser is utilized to realize bending and forming of the silicon material with the thickness being 0.1mm-0.3mm, a 30-degree bending angle can be obtained, the bending quality is good, simultaneously, the operation is convenient, and the technology is simple, so that the bending and forming method is beneficial to realizing automatization. The laser bending technology adopted by the invention belongs to a non-contact processing form, has no contact damage to the surface of the material, and can effectively avoid damage caused by being contacted with external force in the bending process of the silicon wafer.

Description

Technical field [0001] The invention relates to a manufacturing technology of a semiconductor device, in particular to a bending forming method of a thin silicon wafer. Background technique [0002] With the development of optoelectronic technology, semiconductor devices have not only satisfied the manufacture of planar size, but also increased the demand for complex curved surfaces, especially the application of warped thin silicon beams. Therefore, we are required to use traditional micro-thickness planar structure devices. For further processing. At this time, the thickness of the semiconductor silicon material is relatively thin. If the traditional external force forming is used, it is easy to cause the material to be damaged. Therefore, the external force forming must be carried out under high temperature conditions; while the traditional chemical etching method to achieve bending processing requires a long manufacturing cycle and difficult control It also pollutes the envi...

AI Technical Summary

Problems solved by technology

[0008] 2. The thickness is single, and only the bending result of 50um thickness is given

Thickness is sensitive to external force. If it is relatively thick, it will be difficult to control the external force forming. If the thickness is too large, the silicon wafer will be easily broken.

[0009] 3. External force bending belongs to contact processing, and the external force needs to be strictly controlled, which can easily lead to direct damage to the silicon wafer

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