Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bending and forming method of thin silicon wafer

A technology of bending and forming silicon wafers, which is applied in the fields of technology for producing decorative surface effects, decorative art, gaseous chemical plating, etc., can solve the problems of uncontrollable external force forming, easy breakage of silicon wafers, and damage of silicon wafers, etc., to achieve Good bending effect, beneficial to automation, and avoiding damage

Inactive Publication Date: 2012-11-07
DALIAN UNIV OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 2. The thickness is single, and only the bending result of 50um thickness is given
Thickness is sensitive to external force. If it is relatively thick, it will be difficult to control the external force forming. If the thickness is too large, the silicon wafer will be easily broken.
[0009] 3. External force bending belongs to contact processing, and the external force needs to be strictly controlled, which can easily lead to direct damage to the silicon wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bending and forming method of thin silicon wafer
  • Bending and forming method of thin silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings. Such as Figure 1-2 As shown, a method for bending and forming a thin silicon wafer uses a laser beam 3 with a wavelength of 1064 nm output by a Nd:YAG pulsed laser to scan the silicon wafer, and the thin silicon wafer is formed by the thermal action of the laser beam 3 and the material of the thin silicon wafer 5. Sheet 5 is bent to provide power and temperature conditions, specifically including the following steps:

[0025] A. Select a thin silicon wafer 5 with a length of 2 to 10 mm and a thickness of 0.1 to 0.3 mm to be scanned, and clean it with deionized water;

[0026] B. Install the thin silicon wafer 5 on the pre-adjusted workbench, and fix one end of it with the fixture 6; select the pulse width of the Nd:YAG pulsed laser between 1 and 10ms, and adjust it through the online video system 1 The focus lens 2, after determining the laser beam focal position 4, m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a bending and forming method of a thin silicon wafer, which scans the thin silicon wafer by utilizing Nd:YAG pulse laser and provides power and temperature conditions for bending the thin silicon wafer by thermal action of laser and a thin silicon wafer material. In the bending and forming method, extra temperature environment does not need to be provided in the stage of laser scanning, the bending and forming mainly utilize the thermal action of the laser and the thin silicon wafer material to realize the plastic characteristic of the silicon wafer, and further are realized by stress difference generated by different temperatures on the upper surface and the lower surface. In the bending and forming method, 1064nm pulse laser is utilized to realize bending and forming of the silicon material with the thickness being 0.1mm-0.3mm, a 30-degree bending angle can be obtained, the bending quality is good, simultaneously, the operation is convenient, and the technology is simple, so that the bending and forming method is beneficial to realizing automatization. The laser bending technology adopted by the invention belongs to a non-contact processing form, has no contact damage to the surface of the material, and can effectively avoid damage caused by being contacted with external force in the bending process of the silicon wafer.

Description

technical field [0001] The invention relates to a manufacturing technology of a semiconductor device, in particular to a method for bending and forming a thin silicon wafer. Background technique [0002] With the development of optoelectronic technology, semiconductor devices have not only satisfied the manufacture of plane dimensions, but also increased the demand for complex curved surfaces, especially the application of warped thin silicon beams. Therefore, we are required to use traditional micro-thickness planar structure devices for further processing. At this time, the thickness of the semiconductor silicon material is relatively thin. If the traditional external force forming method is used, the material will easily be damaged. Therefore, external force forming must be carried out under high temperature conditions; while the traditional chemical etching method is used to realize the bending process. The manufacturing cycle is longer and the control is difficult. Lar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00B81C1/00
Inventor 吴东江马广义郭东明刘双
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products