Method and device for writing data in non-volatile memory

Abstract

The invention discloses a method and a device for writing data in a non-volatile memory. The method comprises the following steps of: backing up all data of a memory cell at an address of data to be written-in in a data region to a data buffer region in a random access memory (RAM) when determining that data is to be written in the data region of the non-volatile memory during execution of an operating instruction; backing up original data at the address of the data to be written-in in the data region to a backup buffer region in the RAM and recording address information of the original data, which is backed up, in the data region in the backup buffer region; writing the data to be written in at a corresponding position of the data buffer region according to the address of the data to be written-in in the data region; and writing the data in the data buffer region back to the data region and clearing the backup buffer region when determining that the execution of the operating instruction is finished. By the method and the device, the data is quickly written in the non-volatile memory, write-in frequency of the non-volatile memory is reduced, program running speed is increased and service life of the non-volatile memory is prolonged.

Description

technical field [0001] The invention relates to the technical field of smart cards, in particular to a method and device for writing data into a non-volatile memory. Background technique [0002] Non-volatile memory is a memory whose data is not lost after power failure. Smart cards include non-volatile memory, such as EEPROM (Electrically Erasable Programmable Read-Only Memory, Electrically Erasable Programmable Read-Only Memory), which uses non-volatile memory for data storage, and non-volatile memory is usually divided into multiple A unit of storage called a page. [0003] When writing a non-volatile memory, it is necessary to erase a page of data first, and then write new data to the page, which results in the same time for writing one byte of data and writing one page of data . When an operation instruction is executed, the operation instruction may include multiple discontinuous write operations to data at different locations in the same page. Executing the operati...

AI Technical Summary

Problems solved by technology

[0012] 1) If an operation command includes multiple write operations to data at different locations in the same page, the same page in the data area will be erased repeatedly and the backup area will also be written multiple times, which will reduce the lifetime of non-volatile memory;

[0013] 2) The above three steps will involve data writing to non-volatile memory such as EEPROM. The total number of writes to non-volatile memory in one write operation is 3 times, which takes a long time

If an operation instruction includes multiple writes of n data, the minimum time to execute an operation instruction will be n×8.4ms, which reduces the writing speed of the non-volatile memory

Images