Method for preparing cobalt titanate film by dual-target magnetron sputtering method
A technology of magnetron sputtering and cobalt titanate, which is applied in sputtering plating, chemical instruments and methods, ion implantation plating, etc., can solve the problems of large band gap and limited use range, and achieve easy cost, Good prospects for industrial development and easy operation
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Embodiment 1
[0019] 1) Separately analyze the pure TiO 2 and analytically pure Co 2 o 3 Mix and granulate with binder, then pre-fire at 50MPa at 700°C to prepare TiO 2 Target and Co 2 o 3 target, and then put them into the two radio frequency target positions of the magnetron sputtering apparatus;
[0020] 2) Put the substrate to be coated into a mixed solution of acetone and ethanol with a volume ratio of 1:3, and ultrasonically clean it at an ultrasonic power of 50W, rinse the cleaned substrate with deionized water, and dry it with nitrogen for later use;
[0021] 3) Put the substrate processed in step 2) on the coating sample stage of the magnetron sputtering apparatus, and vacuum the coating chamber and the sample chamber through the vacuum system. When the vacuum degree reaches 1.0×10 -4 At Pa, start the RF target preheating device to preheat for 10 minutes;
[0022] 4) Set the heating temperature of the substrate to 600° C., pass Ar gas into the coating chamber, control the flo...
Embodiment 2
[0026] 1) Separately analyze the pure TiO 2 and analytically pure Co 2 o 3 Mix and granulate with binder, then pre-fire at 100MPa at 200°C to prepare TiO 2 Target and Co 2 o 3 target, and then put them into the two radio frequency target positions of the magnetron sputtering apparatus;
[0027] 2) Put the substrate to be coated into a mixed solution of acetone and ethanol with a volume ratio of 1:8, and ultrasonically clean it at an ultrasonic power of 50W, rinse the cleaned substrate with deionized water, and dry it with nitrogen for later use;
[0028] 3) Put the substrate processed in step 2) on the coating sample stage of the magnetron sputtering instrument, and vacuum the coating chamber and the sample chamber through the vacuum system. When the vacuum degree reaches 9.9×10 -4 At Pa, start the RF target preheating device to preheat for 10 minutes;
[0029] 4) Set the heating temperature of the substrate to 100°C, feed Ar gas into the coating chamber, control the flo...
Embodiment 3
[0033] 1) Separately analyze the pure TiO 2 and analytically pure Co 2 o 3 Mix and granulate with binder, then pre-fire at 500°C at 70MPa to prepare TiO 2 Target and Co 2 o 3 target, and then put them into the two radio frequency target positions of the magnetron sputtering apparatus;
[0034] 2) Put the substrate to be coated into a mixed solution of acetone and ethanol with a volume ratio of 1:4, and ultrasonically clean it at an ultrasonic power of 50W, rinse the cleaned substrate with deionized water, and dry it with nitrogen for later use;
[0035] 3) Put the substrate processed in step 2) on the coating sample stage of the magnetron sputtering instrument, and vacuum the coating chamber and the sample chamber through the vacuum system. When the vacuum degree reaches 9.9×10 -4 At Pa, start the RF target preheating device to preheat for 10 minutes;
[0036] 4) Set the heating temperature of the substrate to 300° C., pass Ar gas into the coating chamber, control the fl...
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