Method for epitaxial growth of molecular beam of low-density InAs quantum dots

Abstract

The invention discloses a method for epitaxial growth of a molecular beam of low-density InAs quantum dots, which comprises the following steps of: putting a GaAs substrate on a sample support, and introducing the GaAs substrate into a sample introduction room for baking; after baking, introducing the GaAs substrate into a preparation room, and degassing the GaAs substrate; introducing degassed GaAs substrate into a growth room, heating a heater of the GaAs substrate, and deoxidizing the GaAs substrate under the protection of As; cooling the heater of the GaAs substrate to the growth temperature, growing a GaAs buffer layer, and doping Si; growing a plurality of pairs of GaAs / AlGaAs distributed Bragg reflectors; reducing the growth temperature, and growing low-density quantum dots; growing an InGaAs(Sb) covering layer; growing coupled quantum dots to expand the wavelength; growing a doped GaAs layer; and manufacturing upper and lower electrodes. By using the method, the luminous efficiency of the quantum dots is effectively improved, the collection efficiency is improved, and the regulation and control of the wavelength are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for growing low-density quantum dots, in particular to a molecular beam epitaxy (MBE) method for growing low-density InAs quantum dots on a GaAs substrate. Background technique [0002] In recent years, with the development of high-quality self-organized quantum dot technology, the research of semiconductor quantum dots in quantum optics and quantum communication has attracted more and more people's interest. These quantum dots not only finally realize the three-dimensional confinement of the carriers, resulting in the energy of the carriers being quantized in three dimensions and having discrete energy levels, showing the shell filling characteristics of some atoms, but also naturally In solid systems, photons with non-classical statistical distributions can be tuned. [0003] The anti-bunching effect of photo-induced or electro-induced photons has been...

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Problems solved by technology

However, this method requires high-precision lithography, and due to the diffraction at the metal hole, the extraction efficiency is limited when coupled with a single-mode fiber; and the external quantum efficiency is very low due to the lack of space constraints for the carriers.

[0007] In short, it is very difficult to grow mature long-wavelength quantum dots with low density and long-wavelength single-photon sources matched with optical fibers.

Because of this, there is no mature low-density quantum dot single-photon light source on the market

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