A mixed trimming method

Abstract

The invention relates to a method of trimming a structure (500) comprising a first wafer (200) bonded to a second wafer (300), the first wafer (200) having a chamfered edge. The method comprises a first step (S4) for trimming the edge of the first wafer (200) carried out by mechanical machining over a predetermined depth (Pd1) in the first wafer. This first trimming step is followed by a second step (S5) for non-mechanical trimming over at least the remaining thickness of the first wafer.

Description

technical field [0001] The invention relates to the field of manufacturing multilayer semiconductor structures or substrates, also called multilayer semiconductor wafers, produced by transferring at least one layer onto a support. The transfer layer is formed by molecularly bonding a first wafer, usually thinned after bonding, to a second wafer or support. Said first wafer may also comprise all or part of a component, or a plurality of microcomponents, which, when occurring together with three-dimensional (3D) integration of components, requires the transfer of one or more layers of microcomponents to a final support, And it also occurs with circuit transfer, for example, in the manufacture of backlit imaging devices. Background technique [0002] The edges of the wafers used to form the transfer layer and support usually have chamfers or edge roundings which facilitate handling of the wafers and avoid breakage at the edges if these edges protrude. Particulates that contam...

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Problems solved by technology

[0005] However, such die-cutting can cause the problem of flaking at the bonding interface between the transfer layer and the support, as well as flaking in the transfer layer itself

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