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Method for artificially synthesizing sapphire

A synthetic and sapphire technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve problems such as bluish or reddish, affect quality and fineness, limit the application of artificial sapphire, and reduce production costs , the effect of increasing labor productivity

Inactive Publication Date: 2013-03-20
四川鑫通新材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After annealing, the artificial sapphire produced will appear bluish or reddish, which will affect the quality and color
It limits the application of artificial sapphire in industrial fields such as microwave dielectric materials, waveguide lasers, high-precision bearing components, and optical lenses with high light transmittance.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Preparation: select a sintering machine with better performance for trial production equipment; prepare pure white agent-free α-Al for testing 2 O 3 The powder has a purity of 99.996% and an average particle size of 3.4μm. Make the 120 mesh screen of the charging hopper.

[0036] Cleaning: Use a blower to blow the inside of the charging hopper.

[0037] Loading: Put pure white without agent α-Al 2 O 3 The powder is poured into a 120-mesh screen hopper, and covered with a cover to isolate dust.

[0038] Inserting the seed crystal: insert the seed crystal with the 90° crystal orientation of the M axis into the top of the growth support vertically; when selecting the seed crystal, the molten crystal end of the seed crystal must be tetragonal and there should be no crystal orientation defects, otherwise it will be Refraction of light has an effect.

[0039] Sintered crystal: 1). Ignition and gas adjustment: Ignite the hydrogen-oxygen flame, adjust the ratio of normal hydrogen-oxyg...

Embodiment 2

[0053] Preparation: select a sintering machine with better performance for trial production equipment; prepare pure white agent-free α-Al for testing 2 O 3 The powder has a purity of 99.996% and an average particle size of 3.4μm. Make the 120 mesh screen of the charging hopper.

[0054] Cleaning: Use a blower to blow the inside of the charging hopper.

[0055] Loading: Put pure white without agent α-Al 2 O 3 The powder is poured into a 120-mesh screen hopper, and covered with a cover to isolate dust.

[0056] Inserting the seed crystal: insert the seed crystal with the 90° crystal orientation of the M axis into the top of the growth support vertically; when selecting the seed crystal, the molten crystal end of the seed crystal must be tetragonal and there should be no crystal orientation defects, otherwise it will be Refraction of light has an effect.

[0057] Sintered crystal: 1). Ignition and gas adjustment: Ignite the hydrogen-oxygen flame, adjust the ratio of normal hydrogen-oxyg...

Embodiment 3

[0071] Preparation: select a sintering machine with better performance for trial production equipment; prepare pure white agent-free α-Al for testing 2 O 3 The powder has a purity of 99.996% and an average particle size of 3.4μm. Make the 120 mesh screen of the charging hopper.

[0072] Cleaning: Use a blower to blow the inside of the charging hopper.

[0073] Loading: Put pure white without agent α-Al 2 O 3 The powder is poured into a 120-mesh screen hopper, and covered with a cover to isolate dust.

[0074] Inserting the seed crystal: insert the seed crystal with the 90° crystal orientation of the M axis into the top of the growth support vertically; when selecting the seed crystal, the molten crystal end of the seed crystal must be tetragonal and there should be no crystal orientation defects, otherwise it will be Refraction of light has an effect.

[0075] Sintered crystal: 1). Ignition and gas adjustment: Ignite the hydrogen-oxygen flame, adjust the ratio of normal hydrogen-oxyg...

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PUM

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Abstract

The invention belongs to the technical field of a preparation method of an artificial crystal material, in particular relating to a method for artificially synthesizing sapphire and aiming to solve the technical problem of providing a preparation method of the artificially synthesized pure white sapphire with stable product quality. The preparation method of artificially synthesizing the sapphire comprises the following steps: adding a raw material; inserting seed crystals; and sintering crystals, wherein, the step of sintering the crystals comprises the procedures of crystallizing chemical materials, centering, expanding the crystals and performing equal-diameter growth; the adopted raw material is aluminum oxide pure white powder, the purity is at least 99.996%, the particle size is 2.1mu m-5.7mu m, and the density is 1.14-1.86g / m<3>; and crystal roots (Phi3-5mm and L5-8mm) grow before expanding the crystals. In the invention, the pure white high-purity superfine aluminum oxide powder is used to replace aluminum oxide powder containing an ammonium ferric sulfate oiling agent and an ammonium fluorotitanate oiling agent to obtain the artificially synthesized pure white sapphire without impurities.

Description

Technical field [0001] The invention belongs to the technical field of preparation methods of artificial crystal materials, and particularly relates to a method for artificially synthesizing sapphire. Background technique [0002] In the production process of a traditional alumina powder, in order to solve the problem of the behavior of the alumina powder, some chemical impurities (such as: ferric ammonium sulfate, ammonium fluorotitanate, methyl ammonium sulfate) are added to the molten ammonium aluminum sulfate raw material roasting powder. Ji Hong). At present, artificial sapphire manufacturers use the above-mentioned alumina powder with chemical impurities for production. The traditional production process includes the steps of adding raw materials, inserting seeds, and sintering crystals. Sintered crystals are divided into material crystallization, centering, crystal root growth, crystal expansion and equal diameter growth. Specifically: δ-Al is used 2 O 3 Or γ-Al 2 O 3 Alu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00C30B29/20
Inventor 钱幼平代成唐大林
Owner 四川鑫通新材料有限责任公司
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