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Fabricating method of InGaN (Indium-Gallium-Nitrogen) semiconductor photoelectrode

A manufacturing method and photoelectrode technology, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., can solve the problems of small contact area of ​​electrolyte and low reaction efficiency, and achieve the effect of increasing effective contact area, improving conversion efficiency and reducing reflection.

Inactive Publication Date: 2010-12-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] like figure 2 As shown, the InGaN photoelectrode produced according to the existing process is usually a flat plate structure, that is, an n-type or p-type InGaN layer 22 is formed on the epitaxial growth of the substrate 21, and finally a metal ohmic contact is prepared on the InGaN layer 22 on the surface. , and connected to the external circuit 14, the surface of the epitaxial wafer grown by the epitaxial method is flat, and it will have a strong reflection of sunlight. At the same time, the contact area between the flat plate structure and the electrolyte in the hydrolysis system is small, and the reaction efficiency is low.

Method used

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  • Fabricating method of InGaN (Indium-Gallium-Nitrogen) semiconductor photoelectrode

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Embodiment 1

[0046] Embodiment one: see Figure 3 ~ Figure 5 shown. The InGaN layer 22 is epitaxially grown on the substrate 21 by metal organic chemical vapor deposition (MOCVD), wherein the substrate 21 is a sapphire substrate; the InGaN layer 22 is an n-type GaN epitaxial layer with a thickness of 3000nm; Deposit 200nm thick SiO on layer 22 2 Dielectric film; then vapor-deposit metal Ni with a thickness of 15nm on the dielectric film, and gather metal Ni into metal islands with a diameter of about 200 nanometers by means of rapid annealing. Using the metal island as a mask material, etch the InGaN layer 22 with an etching depth of 100nm, thereby producing a nano-microstructure 31, wherein the nano-microstructure is a GaN nano-column; A surface layer 41 is grown on the epitaxial wafer surface of the structure 31, and the surface layer 41 is n-type In with a thickness of 200 nm. 0.1 Ga 0.9 N layer to finally obtain an InGaN semiconductor photoelectrode.

Embodiment 2

[0047] Embodiment two: see Figure 3 ~ Figure 5 shown. The InGaN layer 22 is epitaxially grown on the substrate 21 by metal organic chemical vapor deposition (MOCVD), wherein the substrate 21 is a sapphire substrate; the InGaN layer 22 is an n-type GaN epitaxial layer with a thickness of 3000nm; Deposit 200 nm thick SiO on layer 22 2 Dielectric film; then vapor-deposit metal Ni with a thickness of 15nm on the dielectric film, and gather metal Ni into metal islands with a diameter of about 200nm by means of rapid annealing. Using the metal island as a mask material, etch the InGaN layer 22 with an etching depth of 100nm, thereby producing a nano-microstructure 31, wherein the nano-microstructure is a GaN nano-column; A surface layer 41 is grown on the epitaxial wafer surface of the structure 31, and the surface layer 41 is p-type In with a thickness of 200 nm. 0.1 Ga 0.9 N layer to finally obtain an InGaN semiconductor photoelectrode.

Embodiment 3

[0048] Embodiment three: see Figure 3 ~ Figure 5 shown. Deposit 200 nm thick SiO on the substrate 21 2 A dielectric film, wherein the substrate 21 is an n-type GaN substrate material; then metal Ni is evaporated on the dielectric film with a thickness of 15nm, and the metal Ni is aggregated into metal islands with a diameter of about 200nm by rapid annealing. Using the metal island as a mask material, etch the substrate 21 with an etching depth of 100nm, thereby producing a nano-microstructure 31, wherein the nano-microstructure 31 is a GaN nanocolumn; A surface layer 41 is grown on the epitaxial wafer surface of the microstructure 31, and the surface layer 41 is n-type In with a thickness of 200 nm. 0.1 Ga 0.9 N layer to finally obtain an InGaN semiconductor photoelectrode.

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Abstract

The invention discloses a fabricating method of an InGaN (Indium-Gallium-Nitrogen) semiconductor photoelectrode, which comprises the following steps of: 1, taking a substrate (21); 2, epitaxially growing an InGaN layer (22) on the substrate (21); 3, fabricating a nanometer microstructure layer (31) on the InGaN layer (22); and 4, epitaxially growing or depositing an n-shaped or p-shaped surface layer (41) on the InGaN nanometer microstructure layer (31). The invention can be used for introducing the nanometer structure to the surface of the InGaN semiconductor photoelectrode, thereby greatly reducing the reflection of the surface of the photoelectrode on light, increasing the effective contact area of the photoelectrode and electrolyte, enhancing the efficiency of electrochemical reaction and furthest enhancing the conversion efficiency of the InGaN semiconductor photoelectrode on sunlight.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor photoelectrode in a water splitting hydrogen production system using solar energy, in particular to a method for introducing an InGaN semiconductor photoelectrode and introducing nano-microstructures on the surface of the electrode to improve the conversion efficiency of the semiconductor photoelectrode to sunlight . Background technique [0002] All human beings are facing increasing energy and environmental pressure, and "low-carbon economy" has increasingly become a concern of people. For this reason, governments of various countries and large commercial companies have been devoting themselves to finding safe and non-polluting energy sources that can replace fossil energy sources. Hydrogen is considered as a future energy source, how to develop and utilize hydrogen energy has attracted widespread attention from various countries. Hydrogen has many potential uses: it can be used as a n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/00C25B1/04
CPCY02E60/366Y02E60/36
Inventor 王辉朱建军张书明杨辉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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