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Method for manufacturing selective emitter solar cell

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as complicated processes and increased costs, and achieve the goals of improving conversion efficiency, reducing contact resistance, and inhibiting surface recombination Effect

Active Publication Date: 2010-12-01
HEJIAN TECH SUZHOU
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  • Application Information

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Problems solved by technology

However, the disadvantage of this method is that several times of mask thermal diffusion are required, the process is complicated and the cost is increased

Method used

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  • Method for manufacturing selective emitter solar cell
  • Method for manufacturing selective emitter solar cell
  • Method for manufacturing selective emitter solar cell

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Embodiment Construction

[0019] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, below in conjunction with preferred embodiments of the present invention, describe in detail as follows:

[0020] Step 1: Coating a slurry containing N-type impurities on the P-type substrate for thermal diffusion or performing gas phase diffusion on the P-type substrate to form a higher concentration N-type diffusion layer.

[0021] Step 2: On the light-receiving surface, use a printing plate with a comb-like electrode pattern such as a screen printing device to print silver electrodes and dry them. This electrode is located on the subsequently formed high-concentration emitter layer, generally about 80um.

[0022] Step 3: Implanting P-type impurities after the electrodes on the light-receiving surface are formed. Under the blocking effect of the electrode, there is no P-type impurity implanted under the electrode, so a high N-type diffu...

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PUM

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Abstract

The invention provides a method for manufacturing a selective emitter solar cell, which comprises the following steps of: 1, performing heat diffusion or gaseous phase diffusion directly on a P-type conductive substrate by coating slurry containing N-type impurities to form an N-type diffusion layer; 2, forming a pattern-shaped electrode on the P-type conductive substrate on which the N-type diffusion layer is formed; and 3, implanting P-type impurities on the P-type conductive substrate on which the electrode is formed so as to ensure that the N-type diffusion concentration of the N-type diffusion layer covered with the electrode is higher than that of the N-type diffusion layer which does not cover the electrode. In the method, the high-concentration diffusion layer is formed below the electrode, so that contact resistance is reduced effectively; the low-concentration diffusion layer is formed in other light-transmitting areas to inhibit surfaces from recombining, so the conversion efficiency of the solar cell is improved, the growth step and subsequent cleaning step of an oxidation film are eliminated, and the method is favorable for reducing production cost.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a method for manufacturing a selective emitter solar cell. Background technique [0002] A general method for manufacturing a solar cell is a method in which a thermal diffusion method and a screen printing method are combined. An N-type diffusion layer is formed on the P-type silicon by thermal diffusion. This method only uses thermal diffusion once, and the steps are simple, but it cannot effectively reduce the contact resistance, and cannot obtain higher conversion efficiency. [0003] The current manufacturing method for selective emitter solar cells is to use two times mask thermal diffusion. The first thermal diffusion is to form a high-concentration diffusion layer under the electrode; the second is to diffuse the entire light-receiving surface to form a low-concentration diffusion layer. Forming a high-concentration diffusion layer (emitter layer) containing hig...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224H01L31/0232
CPCY02P70/50
Inventor 王政烈吴月花
Owner HEJIAN TECH SUZHOU
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