Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device

A vector modulation, reflective technology, applied in electrical components, impedance networks, multi-terminal-pair networks, etc., can solve the problems of high cost and large chip area, and achieve the effect of saving production cost, saving chip area and reducing insertion loss

Active Publication Date: 2010-11-17
陕西半导体先导技术中心有限公司
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  • Claims
  • Application Information

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Problems solved by technology

This structure can achieve a better symmetrical constellation diagram, but it occupies a relatively large chip area and costs relatively high

Method used

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  • Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device
  • Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device
  • Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device

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Embodiment Construction

[0020] refer to figure 1 , the existing analog reflective I-Q vector modulation circuit diagram based on GaAs HBT devices, including five 3-dB lange couplers 1, 2, 3, 4, 5, four analog reflective attenuators 6, 7, 8, 9, And a 3-dB wilkinson power combiner 10, the 3-dB lange coupler has four ports, respectively input port, isolation port, through port and coupling port, the signal is input from the input port, output from the through port and coupling port Signals that are 0° and 90° out of phase with the input signal, respectively. The input port of the first 3-dB lange coupler 1 is used as the input of the modulation circuit, and the through port and the coupled port are respectively connected to the second 3-dB lange coupler 2 and the input port of the third 3-dB lange coupler 3; The coupled port and the through port of the second 3-dB lange coupler 2 are respectively connected to the input of the first analog reflection attenuator 6 and the second analog reflection attenua...

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Abstract

The invention discloses a simulated reflection type I-Q vector modulation circuit based on a GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device, mainly solving the problems of large chip-occupied area ratio and high cost of the traditional modulation circuit and comprising a 3-dB Lange coupler (1), two simulated reflection type attenuators (6, 7) and a 3-dB Wilkinson power combiner (10), wherein the straight-through port of the 3-dB Lange coupler is outputted to one input end of the power combiner (10) after directly subjected to phase shift by the first attenuator (6), and the coupling port of the 3-dB Lange coupler is outputted to the other input end of the power combiner (10) after directly subjected to phase shift by the second attenuator (7), wherein the collector electrodes of a gallium arsenide hetero-junction bipolar transistor of each simulated reflection type attenuator are respectively connected with resistors R3 and R4 in parallel for reducing a reflection factor gamma when Vb is equal to 0, and the transmission electrodes of the gallium arsenide hetero-junction bipolar transistors are respectively connected with inductors L1 and L2 in series for offsetting a parasitic effect generated by the HNT device. The invention can be used for generating I-Q modulation signals or carrying out frequency conversion.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, in particular to a reflection type I-Q vector modulation circuit, which is used in digital communication to generate I-Q modulation signals or perform frequency conversion. Background technique [0002] Traditionally, there are two main implementation structures for vector modulators in microwave and millimeter wave applications. The first is composed of two quadrature bi-phase modulators through a 3-dB power combiner; the second is composed of a variable attenuator and a 360° variable phase shifter. Although in the second structure, the insertion loss is very small, it requires the attenuator to have a fixed phase and the phase shifter to have a fixed insertion loss, which makes the circuit design very difficult. Therefore, in microwave and millimeter wave applications, the first structure consisting of two-phase variable analog reflective attenuators is often widely used. [0003]...

Claims

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Application Information

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IPC IPC(8): H03H7/48
Inventor 吕红亮侯学智张玉明张义门石彦强
Owner 陕西半导体先导技术中心有限公司
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