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Manufacture method of semiconductor nano-pillar array structure

A technology of nano-pillar array and fabrication method, which is applied in the field of preparation of semiconductor nanostructures and can solve problems such as difficulties in semiconductor nanostructures

Inactive Publication Date: 2010-10-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, it is common to pre-deposit a layer of metal on the bottom of the PAA template as a conductive layer, and prepare metal nanodots or nanowire arrays by electroplating. However, it is still difficult to prepare semiconductor nanostructures using PAA.

Method used

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  • Manufacture method of semiconductor nano-pillar array structure
  • Manufacture method of semiconductor nano-pillar array structure

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Embodiment Construction

[0017] see figure 1 As shown, the present invention provides a method for manufacturing a semiconductor nanocolumn array structure, comprising the steps of:

[0018] Step 1: growing an aluminum layer 2 on a semiconductor substrate 1, such as figure 1 (A), the thickness of the aluminum layer 2 is 2 μm, the growth of the aluminum layer 2 is the method of electron beam evaporation, thermal evaporation or magnetron sputtering, and the semiconductor substrate is a group IV, III-V compound or II-VI Bulk materials or multi-layer structure materials of group compounds;

[0019] Step 2: anodize the aluminum layer 2 to form holes from the surface to the semiconductor substrate 1, forming a porous aluminum oxide film 3;

[0020] The anodic oxidation process adopts the secondary oxidation method. The specific method is to use the aluminum layer 2 as the anode and the platinum sheet as the cathode to perform the first oxidation in the electrolyte. The electrolyte is an aqueous oxalic aci...

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Abstract

The invention relates to a manufacture method of a semiconductor nano-pillar array structure, comprising the following steps of: 1. growing an aluminum layer on a semiconductor substrate; 2. carrying out anodic oxidation on the aluminum layer to form holes which are directly communicated with the semiconductor substrate from the surface so as to form a porous alumina film; 3. depositing metal on the surface of the porous alumina film and forming metal points in the holes of the porous alumina film; 4. carrying out wet etching on the porous alumina film so as to form a metal point array on the semiconductor substrate; and 5. carrying out etching on the semiconductor substrate by taking the metal point array as a mask film, removing the metal point array and forming a semiconductor nano-pillar array on the semiconductor substrate.

Description

technical field [0001] The invention relates to the preparation technology of semiconductor nanostructures, more specifically, the invention relates to a method of using porous anodic aluminum oxide film as a template, depositing metal dots in holes to realize pattern reverse transfer, and obtaining a semiconductor nanocolumn array structure. Background technique [0002] With the increasingly prominent application value of nanoscale devices in microelectronics, optics, and biochemistry, highly ordered low-dimensional array structures such as nanodots and nanopillars (nanowires) are due to the optical power brought by their quantum dimensions. , electric, magnetic and other properties are getting more and more attention. Commonly used methods for preparing nano-array structures include focused ion beam and electron beam exposure methods, self-organized growth methods, template methods and other methods. Focused ion beam and electron beam exposure methods have high cost, lon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 白安琪成步文左玉华王启明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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