Pyroelectric film material and preparation method thereof

A thin-film material, pyroelectric technology, which is applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc. Low, fast response, the effect of maintaining polarization characteristics for a long time

Inactive Publication Date: 2010-10-20
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the interface effect and surface effect of the thin film, the pyroelectric coefficient of the general pyroelectric material is greatly reduced, which is not conducive to the improvement of the figure of merit.

Method used

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  • Pyroelectric film material and preparation method thereof
  • Pyroelectric film material and preparation method thereof
  • Pyroelectric film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Such as figure 1 As shown, the pyroelectric thin film material of this embodiment includes Nb:SrTiO from bottom to top 3 Substrate 1, CCTO thin film 2 and gold film 3; The Nb:SrTiO 3 The substrate forms the lower electrode; the gold film forms the upper electrode. The thickness of the CCTO thin film is 500nm-1000nm, and 500nm is taken in this embodiment. The thickness of the gold film is 50nm-60nm, and 50nm is used in this embodiment. The gold film can be prepared into various shapes such as round and square, and only needs to control the area within 0.75mm 2 ~13mm 2 That is, when the planar shape of the gold film is circular, the radius of the gold film is preferably 0.5 mm˜2 mm. This not only facilitates the extraction of the electrodes, but also avoids the conduction of the two electrodes caused by too large a gold film area and too many defects in the covered CCTO film. Both the upper electrode and the lower electrode are led out by bonding wires with silver g...

Embodiment 2

[0053] The structure and manufacturing process of the pyroelectric film in this example are consistent with those in Example 1, the only difference being that in the step (5) of the preparation method, the pyroelectric film in this example is polarized at room temperature for 48 hours. The pyroelectric coefficient of the pyroelectric film of this embodiment is measured, and it can be calculated from the measurement results that the pyroelectric coefficient of the material can reach 1.4×10 in the range of 20°C to 60°C. -7 C / cm 2 ·K.

Embodiment 3

[0055] The structure and manufacturing process of the pyroelectric film of this embodiment are consistent with that of Example 1, the only difference being that in the step (5) of the preparation method, the pyroelectric film of this embodiment is polarized for 72 hours at room temperature, and the The pyroelectric film of the embodiment is measured for the pyroelectric coefficient, and it can be calculated from the measurement results that the pyroelectric coefficient of the material can reach 1.5×10 in the range of 20°C to 60°C. -7 C / cm 2 ·K.

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Abstract

The invention provides a pyroelecric film material, which comprises a substrate, a CaCu3Ti4O12 film and a metallic film in sequence from top down, wherein the substrate is made of an electric-conducting material and formed into a lower electrode; and the metallic film is formed into an upper electrode. Compared with the prior art, the pyroelecric film material of the invention has a simple preparation process, relatively low preparation cost and relatively high pyroelecric coefficient. In the invention, the prepared material is artificially polarized, so the originally inconspicuous pyroelecric effect becomes obvious, the physical properties are stable, and the polar characteristics of electric dipole moment can be maintained for a long time. Compared with other pyroelecric materials, the pyroelecric film material of the invention has a thin sensitive element, small volumetric specific heat, high sensitivity and microsecond grade of response speed, is easily integrated with semiconductor devices, improves the integrated level of sensors and can be formed into a focal-plane thermal imaging device.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular, the invention relates to a pyroelectric film material with high pyroelectric coefficient and a preparation method thereof. Background technique [0002] The principle of pyroelectric materials is: after the incident light is absorbed by the sample, there will be a temperature change, resulting in a change in the density (polarization) of the electric dipole matrix in the material, causing a change in the net charge on the surface of the material, and thus generating A voltage difference proportional to temperature change. [0003] At present, pyroelectric materials have been widely used in military, aviation, aerospace and other cutting-edge technical fields, as well as non-contact telemetry temperature, intrusion anti-theft alarm, automatic control of home appliances, etc. In particular, focal plane pyroelectric infrared detectors can also be used in thermal imaging system...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/22
Inventor 陈聪周岳亮宁廷银陆珩王灿张东香王沛明海杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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