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GaAs unijunction solar cell

A solar cell and single-junction technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as increased production costs, difficult production, complex and precise manufacturing processes, etc., and achieve the effect of broadening the absorption band and improving photoelectric conversion efficiency

Inactive Publication Date: 2010-10-13
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, multi-junction solar cells include multi-layer material structures, and their manufacturing process is very complicated and precise, which will undoubtedly bring great difficulties to future production and greatly increase production costs.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1) On the GaAs substrate 1, a buffer layer 2, a GaAs p-n junction 3, a window layer 4 and an ohmic contact layer 5 are sequentially grown by MOCVD method (such as figure 2 Shown), composed of GaAs single-junction solar cell epitaxial layer.

[0018] 2) The upper electrode 6 is prepared on the upper surface of the GaAs single-junction solar cell epitaxial layer by sequentially using the traditional processes of photolithography, electrode evaporation, alloying, and electrode thickening (such as image 3 shown).

[0019] 3) Etching away the ohmic contact layer 5 other than the bottom of the upper electrode 6 by a selective ICP etching method, so that a platform of the window layer 4 appears (such as Figure 4 shown).

[0020] 4) On the platform of the window layer 4, deposit a layer of photoluminescent material CaS:Eu as the lower film 7 of the double-layer anti-reflection film. Deposit a layer of 80nm CaS film by magnetron sputtering, and then deposit a layer of 1nm ...

Embodiment 2

[0023] 1) On Ge substrate 1, buffer layer 2, GaAsp-n junction 3, window layer 4 and ohmic contact layer 5 are sequentially grown by MOCVD method (such as figure 2 Shown), composed of GaAs single-junction solar cell epitaxial layer.

[0024] 2) The upper electrode 6 is prepared on the upper surface of the epitaxial layer of the GaAs single-junction solar cell by sequentially using the traditional processes of photolithography, electrode evaporation, alloying, and electrode thickening (such as image 3 shown).

[0025] 3) Etch the ohmic contact layer 5 other than the bottom of the upper electrode 6 by selective wet etching, so that a platform of the window layer 4 appears (such as Figure 4 shown).

[0026] 4) On the platform of the window layer 4, deposit a layer of Sm-doped photoluminescent material CaS:Sm as the lower film 7 of the double-layer anti-reflection film. A layer of 80nm CaS film was deposited by atomic layer deposition, and a layer of 0.5nm SmF was deposited b...

Embodiment 3

[0028] 1) On the Ge substrate 1, the buffer layer 2, the GaAs p-n junction 3, the window layer 4 and the ohmic contact layer 5 are sequentially grown by the method of MBE (such as figure 2 Shown), composed of GaAs single-junction solar cell epitaxial layer.

[0029] 2) The upper electrode 6 is prepared on the upper surface of the epitaxial layer of the GaAs single-junction solar cell by sequentially using the traditional processes of photolithography, electrode evaporation, alloying, and electrode thickening (such as image 3 shown).

[0030] 3) Etch the ohmic contact layer 5 other than the bottom of the upper electrode 6 by selective wet etching, so that a platform of the window layer 4 appears (such as Figure 4 shown).

[0031] 4) On the platform of the window layer 4, deposit a layer of photoluminescent material CaS:Sm as the lower layer 7 of the double-layer anti-reflection film. Deposit a layer of 46nm CaS film by vacuum thermal evaporation, and then deposit a layer ...

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Abstract

The invention discloses a GaAs unijunction solar cell. An electrode and a double-layer antireflection film are formed on the surface of an epitaxial layer of the cell; and an upper film of the double-layer antireflection film is made of a material with a refractive index smaller than that of a lower film, while the lower film is made of a photoluminescence material with a refractive index between the refractive indexes of the upper film and a window layer. The photoluminescence material can absorb the sunlight of a wave band which cannot be absorbed by GaAs and convert the part of sunlight into light which can be absorbed by the GaAs so that the sunlight of the wider wave band is absorbed by the GaAs solar cell and converted into electrical energy, the absorption wave band of the GaAs unijunction solar cell on the sunlight is greatly broadened and the photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention belongs to the field of compound semiconductor solar cells, in particular to a high-efficiency GaAs single-junction solar cell. Background technique [0002] Due to the gradual depletion of non-renewable energy such as coal and oil and the continuous deterioration of the environment, human beings urgently need to use green energy to solve the huge problems they face. Solar cells manufactured using photoelectric conversion technology can directly convert solar energy into electrical energy, which greatly reduces people's dependence on coal, oil and natural gas in production and life, and has become one of the most effective ways to utilize green energy. [0003] III-V semiconductor GaAs solar cell is a kind of solar cell with the highest conversion efficiency. At the same time, it has the advantages of high temperature resistance, strong radiation resistance, good temperature characteristics, and is suitable for concentrating light. It is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/055H01L31/052H01L31/18H01L31/0216
CPCY02E10/50Y02E10/52Y02P70/50
Inventor 宋明辉吴志浩
Owner HUAZHONG UNIV OF SCI & TECH
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