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Insulated gate bipolar transistor

A technology of bipolar transistors and insulated gates, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult hole discharge and reduction of the main unit area, and achieve the effect of suppressing the decrease of current density and improving the accumulation effect

Active Publication Date: 2010-09-29
SANYO ELECTRIC CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the state where the IGBT is turned on, holes should be injected from the collector side to the base layer, but due to this structure, the area of ​​the main unit is reduced, so it is difficult for holes to be discharged to the emitter side through the main unit

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] First, refer to Figure 1~5 The structure of IGBT 1A according to the first embodiment of the present invention will be specifically described. figure 1 is a top view of the IGBT. in addition, figure 2 , 3 , 4 and 5 are respectively figure 1 The cross-sectional view of the IGBT along the lines A-A', B-B', C-C', and D-D'.

[0030] First, refer to figure 1 The plan view structure of IGBT 1A according to the first embodiment will be described. IGBT 1A includes drift layer 2 , base region 3 , emitter region 4 , body region 5 , guard ring 6 , gate electrode 7 , and gate routing wiring 8 . In addition, the emitter electrode 9 connected to the emitter region 4 and the interlayer insulating film 10 insulating the emitter electrode 9 from the drift layer 2 or the gate electrode 7 are actually formed. Their illustrations are omitted in .

[0031] Each component will be described in detail. The gate electrode 7 has a stripe shape extending in the Y direction. Also, a ...

Embodiment 2

[0056] Next, the IGBT 1B according to the second embodiment will be described. In this IGBT 1B, the effect of accumulating holes is further improved compared with the IGBT 1A according to the first embodiment.

[0057] Figure 6 A cross section of IGBT 1B according to this embodiment along line A-A' corresponding to IGBT 1A according to First Embodiment is shown ( figure 2 ) of the cross-sectional structure.

[0058] In contrast to the first embodiment, in the IGBT 1B according to the present embodiment, the N-type conductivity type hole discharge suppression region 13 is formed on the side surface of the base region 3 . The other structures are the same as those of the first embodiment, and thus description thereof will be omitted here.

[0059] To describe the effect of this structure, when referring to the section along line A-A' of IGBT 1A related to the first embodiment ( figure 2 ), in the IGBT 1A according to the first embodiment, holes are reliably accumulated un...

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Abstract

Provided is an insulated gate bipolar transistor, capable of improving the accumulation effect of cavities, and preventing the decrease of the current density. Among the insulated gates, a drift area is formed to be separated into a plurality of areas. Moreover, an interlayer insulation film is formed between an emitter electrode and a drift layer among the drift areas.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor. Background technique [0002] IGBT (Insulated-Gate Bipolar Transistor: Insulated Gate Bipolar Transistor) is used as a switching element in the field of power electronics. [0003] The IGBT is roughly divided into a PT (Punch Through: punch-through type) structure and an NPT (Non Punch Through: non-punch-through type) structure. [0004] The PT structure uses a semiconductor substrate as a collector layer, on which a buffer layer and a drift layer are epitaxially grown in sequence. When high voltage resistance is required, the drift layer needs to have a corresponding thickness. Therefore, the cost due to the epitaxial growth of the drift layer increases. [0005] In contrast, in the NPT structure, a wafer grown by the FZ (Float Zoning: floating zone melting method) method is ground to form a drift layer. Thereby, even if resistance to high pressure is required, an increase in manufactu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739
CPCH01L29/7397H01L29/0619H01L29/0696
Inventor 米田秀司泽村宪治
Owner SANYO ELECTRIC CO LTD
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