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Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof

A thin-film material and photoconductive technology, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of further improvement in use and response range, high environmental protection requirements and safety requirements for the preparation process, and achieve stable process, superior performance, Inexpensive effect

Inactive Publication Date: 2010-09-22
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Most of these carbon thin film materials are deposited by vapor phase method, and a large amount of hydrocarbon gas or ammonia gas is used in the preparation process, or toxic materials are used, so the environmental protection and safety requirements of the preparation process are very high.
And the magnitude of the response to light needs to be further improved

Method used

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  • Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof
  • Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof
  • Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof

Examples

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Embodiment 1

[0023] (a-C:Fe) / Al with Photovoltaic and Photoconductive Effects 2 o 3 / Si iron-doped carbon thin film material, on the n-type Si substrate 1, an aluminum oxide layer 2 and an iron-doped carbon layer 3 (a-C:Fe layer) are sequentially arranged to form an iron-doped carbon thin film material with photovoltaic and photoconductive effects .

[0024] The iron-doped carbon thin film material with photovoltaic and photoconductive effects is prepared by laser pulse deposition method. The steps of the method are as follows: n-type Si(100) substrate, Al 2 o 3 The single crystal target, Fe target and high-purity C target are placed in the vacuum coating chamber of the laser pulse deposition equipment, and the back of the coating chamber is evacuated to 5×10 with a mechanical pump and a molecular pump. -4 After Pa, heat the substrate to the deposition temperature: 400±50°C, at the above deposition temperature, bombard Al with laser pulses generated by a KrF laser (Lambda Physics LPX205...

Embodiment 2

[0032] (a-C:Fe) / Al with Photovoltaic and Photoconductive Effects 2 o 3 / Si iron-doped carbon thin film material, an aluminum oxide layer and an iron-doped carbon layer are sequentially arranged on an n-type Si substrate to form an iron-doped carbon thin film material with photovoltaic and photoconductive effects.

[0033] The iron-doped carbon thin film material with photovoltaic and photoconductive effects is prepared by laser pulse deposition method. The steps of the method are as follows: n-type Si(100) substrate, Al 2 o 3 The single crystal target, Fe target and high-purity C target are placed in the vacuum coating chamber of the laser pulse deposition equipment, and the back of the coating chamber is evacuated to 5×10 with a mechanical pump and a molecular pump. -4 After Pa, heat the substrate to the deposition temperature: 450±50°C, at the above deposition temperature, bombard Al with laser pulses generated by a KrF laser (Lambda Physics LPX205, 248nm, 25ns FWHM) 2 o ...

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Abstract

The invention discloses an iron-doped carbon thin-film material with photovoltaic and photoconductive effects and a preparation method thereof, belonging to the technical field of thin-film solar cell and the photoelectric device which use the new energy. The iron-doped carbon thin-film material is prepared by arranging an aluminum oxide layer and an iron-doped carbon layer on an n-type Si (silicon) substrate with the pulsed laser deposition process without using any toxic, flammable and explosive substances during the preparation process. The iron-doped carbon thin-film material has excellent performances and low price and is the excellent material for the visible light sensor material and the potential photovoltaic device. When irradiated by a simulated sunlight source of 100 mW / cm2 (AM 1.5) in the room temperature, the photoelectric thin film can ensure that the device has the open-circuit voltage of 436 mV, the short-circuit current of 14 mA / cm2 and the fill factor of more than 33 percent. The photoelectric thin film has the photoconductive change value of more than 400 times under the condition that the test voltage is about 1 V.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells and photoelectric device materials in new energy, and in particular relates to an iron-doped carbon thin-film material with photovoltaic and photoconductive effects and a preparation method thereof. Background technique [0002] With the vigorous development of modern industry, the traditional petrochemical energy is being exhausted, and the resulting environmental pollution is also becoming more and more serious. Therefore, how to efficiently utilize solar energy has become the focus of energy research by governments all over the world, and the development of high-efficiency and low-cost solar cells is one of the important ways to utilize solar energy. Solar photovoltaic cells are devices that convert light energy into electrical energy by the photoelectric effect. The working principle of the photovoltaic effect is: sunlight shines on the semiconductor P-N junction to form hole-el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/04H01L31/20
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 谭新玉章晓中王集敏万蔡华
Owner TSINGHUA UNIV
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