Heat shield for single crystal furnace and single crystal furnace with same

Abstract

The invention discloses a heat shield for a single crystal furnace and the single crystal furnace with the same. The heat shield comprises a positioning part and a frustum part, wherein the positioning part is used for connecting with a furnace body, provided with an upper opening end and connected with the upper end of the frustum part, a lower opening end is formed at the lower end of the frustum part which comprises a substrate and an inner layer arranged on the inner surface of the substrate, and inner layer materials for forming the inner layer are selected from a group including silicon, silicon compounds, metals resisting 1400 DEG C, boride, carbide, nitride and mixtures thereof. The heat shield of the invention is mounted above a quartz crucible in the single crystal furnace to realize much loading and avoid mixing carbon contents during loading so that high-quality single crystal can be obtained while the production efficiency is improved, and the production cost is decreased. In addition, the invention also discloses a single crystal preparation method.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a heat shield used for multiple charges in a single crystal furnace and a single crystal furnace using the heat shield. Background technique [0002] The Czochralski method (ie, Cz method) crystal growth is the main growth method for semiconductor and solar cell single crystal silicon. The process of pulling a single crystal by the Czochralski method includes: charging, heating, melting, single crystal growth, and cooling. Wherein, the charging amount directly determines the length of the grown single crystal. Therefore, from the perspectives of improving production efficiency and yield and reducing production costs, it should be charged as much as possible. [0003] Since the raw materials used to produce single crystals are block or granular, there are a large number of gaps between the blocks, resulting in a large volume reduction of the solid polycrystal...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to at least solve one of the above-mentioned technical defects, especially solve the problem of ensuring the quality of the generated single crystal while charging as much material as possible during the growth of single crystal silicon

This solves the problem of ensuring the quality of the generated single crystal while charging as much material as possible during the growth of single crystal silicon

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