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Method and equipment for producing elementary silicon

A production method and production equipment technology, applied in the field of simple silicon, can solve the problems of increased production complexity, production cost and energy consumption, small specific surface area of ​​silicon rod deposition, low primary conversion rate of raw materials, etc., so as to save labor and operation Cost and energy consumption and waste, reduced possibility of secondary pollution, and high internal space utilization

Active Publication Date: 2010-09-22
新疆戈恩斯能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, this improved Siemens production process has the following disadvantages: 1) Due to the small specific surface area of ​​silicon rod deposition, the space utilization rate in the reactor is low, the primary conversion rate of raw materials is low, and the output is limited
[0007] However, the fluidized bed process also has problems such as the deposition of silicon on the reactor wall, which reduces the internal space of the fluidized bed, and as the thickness of the inner wall changes, the uneven thermal stress on the inner wall leads to material damage, and the fluidized bed gas distributor is prone to silicon deposition. However, clogging leads to defects such as shutdown, and the primary conversion rate of the fluidized bed process still needs to be improved.
[0008] At the same time, regardless of the Siemens process or the fluidized bed process, the rod-shaped polysilicon or granular polysilicon produced must be melted into a liquid state at high temperature in the subsequent processing steps before the polysilicon ingot can be produced or the Czochralski method can be used. Monocrystalline silicon, which undoubtedly greatly increases the production complexity, production cost and energy consumption, and there is also the risk of external impurities contaminating the manufactured polysilicon ingot or single crystal silicon (secondary pollution)

Method used

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  • Method and equipment for producing elementary silicon
  • Method and equipment for producing elementary silicon
  • Method and equipment for producing elementary silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0129] In this example, using figure 2 Production equipment shown. Specifically, the tower body height h of the reaction tower 1 is 1000mm, the tower inner diameter d is 300mm, the filler (Pall ring) height b is 500mm, and the height c between the lower surface of the filler and the upper surface of the tower bottom flange is 200mm.

[0130] Use monosilane (i.e. silicon compound, temperature 100°C) as silicon raw material gas 7 at 20m 3 The delivery flow rate of / h is transported into the reaction tower 1 from the lower side of the reaction tower 1 at a height a of 150 mm from the upper surface of the bottom flange of the reaction tower 1 . The temperature in the reaction tower 1 is controlled at about 1600° C., and the atmospheric pressure is controlled at 1 bar. At the same time, molten elemental silicon (purity: 7N) at a temperature of 1600° C. is transported into the reaction tower 1 from the center of the top of the reaction tower 1 as a silicon raw material liquid 8 a...

Embodiment 2

[0135] Exactly the same manner as in Example 1 was carried out except for the following.

[0136] Use the mixed gas of trichlorosilane (i.e. silicon compound) and hydrogen (the volume ratio of trichlorosilane and hydrogen is 1:4) as silicon raw material gas 7, the temperature is 200°C, and the delivery flow rate is 75m 3 / h.

[0137] The temperature in the reaction tower 1 is controlled at about 1800° C., and the atmospheric pressure is controlled at 1 bar.

[0138] The temperature of the silicon raw material liquid 8 is 1900° C., and the delivery flow rate is 160 kg / h.

[0139] The production was stopped after 100 hours of continuous production, a total of 100 kg of silicon raw material liquid 8 was consumed, and a total of about 1400 kg of single crystal silicon (purity 6N) was drawn. As a result, the total power consumption of the production equipment (including the monocrystalline silicon pulling furnace) is about 1.8×10 5 kWh (that is, the average power consumption of ...

Embodiment 3

[0142] Exactly the same manner as in Example 1 was carried out except for the following.

[0143] A mixture of gaseous silicon tetrachloride (that is, silicon compound) and hydrogen (the volume ratio of gaseous silicon tetrachloride and hydrogen at 400°C is 1:4) is used as the silicon raw material gas 7, the temperature is 400°C, and the delivery flow rate is 75m 3 / h.

[0144] The temperature in the reaction tower 1 is controlled at about 1800° C., and the atmospheric pressure is controlled at 2 bar.

[0145] The temperature of the silicon raw material liquid 8 is 1900° C., and the delivery flow rate is 180 kg / h.

[0146] The single crystal silicon drawing furnace 4 was changed to a polysilicon ingot furnace (JJL500 polysilicon ingot furnace, rated power 175kW, manufactured by Zhejiang Jinggong Technology Co., Ltd., not shown) to manufacture polysilicon ingots.

[0147] The production was stopped after 100 hours of continuous production, a total of 150 kg of silicon raw ma...

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Abstract

The invention relates to a method and equipment for producing elementary silicon. The production method comprises the contacting step of using a vaporized silicon compound or mixed gas of the vaporized silicon compound and hydrogen as silicon feed gas to contact melting elementary silicon used as silicon feed liquid, so as to reduce the silicon compound into the elementary silicon. Compared with the prior art, the invention has lower production cost, higher production efficiency and lower energy consumption, and can prepare the elementary silicon with higher purity (such as polycrystalline silicon or monocrystalline silicon).

Description

technical field [0001] The present invention relates to a production method and production equipment of simple silicon, more specifically, the present invention relates to a silicon compound that produces simple silicon (including polycrystalline silicon and single crystal silicon) by using molten simple silicon to reduce gaseous silicon compound raw materials. Single substance production methods and production equipment. Background technique [0002] At present, the production method of most simple silicon (especially polysilicon) is the improved Siemens process, which mainly uses a bell-shaped reactor and a silicon core of about 8mm connected to the electrode as the deposition substrate, and adopts a high-temperature reduction process. gaseous silicon compound raw materials (such as SiHCl 3 ) at H 2 Reductive deposition (chemical vapor deposition) in the atmosphere to generate polysilicon. [0003] The above-mentioned chemical vapor deposition process is carried out in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021C30B29/06
Inventor 陈涵斌钟真武陈其国陈文龙
Owner 新疆戈恩斯能源科技有限公司
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