Packaging structure of semiconductor device and manufacture method thereof

Abstract

The invention discloses a packaging structure of a semiconductor device and a manufacture method thereof, wherein the packaging structure of the semiconductor element comprises a base body, a semiconductor device, a plurality of welding pads, at least one groove, through holes, an intermediate metal layer and a welding bump, wherein the base body comprises a front face and a back face opposite to the front face; the semiconductor device is positioned at the front face of the base body; the welding pads are respectively configured at the periphery of the semiconductor device; the grooves are positioned at the edge region of the back face of the base body; the through holes are positioned at the bottoms of the grooves corresponding to the welding pads; the intermediate metal layer is electrically connected with the welding pads; and the welding bump is electrically connected with the intermediate metal layer. The through holes are not easy to have accumulated metal or insulation materials at openings, thereby greatly improving the yield of the product process and enhancing the reliability of the products.

Description

technical field [0001] The invention relates to the field of semiconductor packaging, in particular to a wafer-level chip packaging structure and a manufacturing method of a semiconductor device. Background technique [0002] Wafer-level chip-scale packaging usually distributes solder pads arranged on the periphery of a semiconductor chip into a large number of metal solder balls arranged in an area array through a redistribution process, and the metal solder balls are also called solder bumps. Since wafer-level chip size packaging is first packaged and tested on the entire wafer, and then cut, it has more obvious advantages: First, the process is greatly optimized, and the wafer directly enters the packaging process, while the traditional process is before packaging. It is necessary to cut and classify the wafers; and, the wafer-level chip size package is a one-time package of all integrated circuits, the marking work is carried out directly on the wafer, and the package te...

AI Technical Summary

Problems solved by technology

This process flow can effectively achieve high-density three-dimensional via interconnection, but there are the following problems: First, there is only a very thin insulating layer between the wafer and the copper layer, which leads to the interconnection of TSV A very high capacitance is formed between them, sometimes even exceeding the capacitance value of the traditional wire bonding interconnection; and, a thicker copper layer is filled in the silicon hole, due to the large gap between the silicon and the copper thermal mismatch, which can lead to significant thermal stress during thermal cycling; and, it is also necessary to overcome the void or seam phenomenon generated when electroplating copper; in addition, electroplating copper is used to completely fill The silicon hole method requires a long man-hour, which increases the production cost

[0004] The Chinese patent application number 200810178977.7 discloses a wafer-level chip packaging method and packaging structure, which can increase the connection area between the intermediary metal layer and the pad. The size of the bottom of the through hole is usually 50-60um. Since the size of the opening of the through hole is extremely small, and the depth of the through hole is relatively large, the opening of the through hole is very easy to Blocked by insulating material or metal, it is difficult to deposit the sidewall of the via hole on the insulating material and the intervening metal layer, and a chip usually has dozens of via holes, as long as the sidewall of one of the via holes is not deposited on Insulating materials or intervening metal layers, or unsatisfactory deposition effects, will lead to a chip electrical failure. For wafer-level chip size packaging, a wafer has thousands of chips, and the probability of chip electrical failure magnified hundreds of times

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