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Preparation method of absorbing layer of copper-zinc-tin-sulfur film solar cell

A thin-film solar cell, solar cell technology, applied in circuits, electrical components, final product manufacturing, etc., can solve problems such as low conversion efficiency and low conversion efficiency, and achieve the effect of improving safety and solving problems of cost and environmental pollution

Inactive Publication Date: 2010-08-11
ZHANJIANG NORMAL UNIV
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Problems solved by technology

Copper-zinc-tin-sulfur thin film is a multi-component compound, and its photoelectric performance is very sensitive to structural defects caused by improper atomic ratio and lattice matching, so that the conversion efficiency of thin-film solar cells with copper-zinc-tin-sulfur as the absorbing layer is far lower than that of copper InSe 19.2% conversion efficiency

Method used

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Embodiment Construction

[0011] Illustrate in conjunction with embodiment, concrete preparation process is as follows:

[0012] Metal precursor deposition:

[0013] 1. The substrate is made of ordinary glass, soaked in an organic solvent, cleaned by ultrasonic waves, and dried.

[0014] 2. Evaporation of the precursor is carried out on an ordinary vacuum coating machine, and the substrate is not heated. The system vacuum is higher than 2×10 -3 Pa; the evaporation temperature is controlled by the current source.

[0015] 3. Put metal zinc, tin and copper into the molybdenum boat, adjust the evaporation current and time to make the evaporation source completely evaporate. The distance between the evaporation source and the substrate is 25-35cm, and the substrate can be rotated at a constant speed in order to increase the uniformity of the film.

[0016] Precursor vulcanization:

[0017] 1. The vulcanization process is carried out in a vacuum high-temperature tube furnace. An appropriate amount of s...

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Abstract

The invention belongs to the technical field of semiconductor photoelectric materials and devices, in particular to a preparation method of an absorbing layer of a copper-zinc-tin-sulfur film solar cell, belonging to the technical field of semiconductor photoelectric materials and devices. The preparation method comprises the following steps: adopting the joint evaporation method to prepare copper, zinc and tin metallic precursors, vulcanizing the precursors in sulfur vapor to obtain copper-zinc-tin-sulfur, and successfully preparing a polycrystalline copper-zinc-tin-sulfur film on a glass substrate under appropriate conditions, wherein the film has a single-phase stannite structure, a direct band gap (1.51eV) which well matches with the solar spectrum and a high absorption coefficient (104cm<-1>) for the visible light, and the resistivity, the carrier mobility and the carrier concentration of the film are respectively up to 1.46 ohm cm, 4.2cm<2> / VS and 2.37*1018cm<-3>. The invention has the advantages of abundant material resources, no toxicity, simple preparation process, tractable film performance and the like, and is applicable to the large-scale chemical industry production.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, in particular to a method for preparing an absorbing layer of a copper-zinc-tin-sulfur thin-film solar cell. Background technique [0002] In recent years, with the gradual depletion of limited non-renewable resources such as oil and coal on the earth, the utilization and development of renewable energy has become more and more urgent. Among them, solar photovoltaic power generation will inexhaustibly radiate to the ground. Solar energy is continuously converted into electrical energy through the photoelectric conversion of photovoltaic devices such as solar cells, and has become the safest, most environmentally friendly and most potential competitor in renewable energy. At present, the bottleneck restricting the development of solar photovoltaic power generation industry lies in high cost and low conversion efficiency. From the perspective of material s...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 邵乐喜张军李达李栋宇
Owner ZHANJIANG NORMAL UNIV
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