TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof

A technology of an array substrate and a manufacturing method, which are applied to the structure of a thin film transistor liquid crystal display and its manufacturing field, can solve the problems of large distance and small storage capacitance, and achieve the improvement of storage capacitance, improvement of aperture ratio and display brightness, and reduction of jump voltage ΔVp. Effect

Active Publication Date: 2010-08-11
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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Problems solved by technology

It can be seen from the calculation formula of the storage capacitor that the size of the storage capacitor per unit area is inversely proportional to the distance between the two electrode plates. Since the existing TFT-LCD array substrate has a gate insulating film and a passivation layer between the two electrode plates of the storage capacitor layer of thin film, the distance between the two electrode plates is relatively large, so the storage capacitance per unit area is relatively small

Method used

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  • TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof
  • TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof
  • TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof

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Embodiment Construction

[0058] The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0059] figure 1 It is a plan view of a pixel unit of the TFT-LCD array substrate of the present invention, figure 2 for figure 1 The cross-sectional view of A1-A1 in the middle, image 3 for figure 1 Sectional view of B1-B1 direction in the middle. Such as Figure 1 ~ Figure 3 As shown, the main structure of the TFT-LCD array substrate of the present invention includes gate lines 10, data lines 11, pixel electrodes 9, thin film transistors and storage electrodes 13 formed on the substrate 1, and the mutually perpendicular gate lines 10 and data lines 11 define In the pixel area, the thin film transistor and the pixel electrode 9 are formed in the pixel area, the gate line 10 is used to provide the turn-on signal to the thin film transistor, the data line 11 is used to provide the data signal to the pixel electrod...

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Abstract

The invention relates to a TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and a manufacture method thereof. The array substrate comprises a grid line and a data line which are formed on the substrate, wherein a pixel region limited by the grid line and the data line is internally provided with a pixel electrode and a film transistor, and a storage electrode forming a storage capacitor together with the pixel electrode is arranged above the grid line. Furthermore, the storage electrode and the data line are arranged in the same layer, and the storage electrode is connected with the grid line through a grid insulation layer arranged on a grid insulation layer film. The storage electrode is arranged above the grid line at two sides of the data line in fragments. By arranging the storage electrode above the grid line, the invention improves the storage capacitor per area, and can not shade the pixel region, thereby effectively improving the aperture opening ratio and the display brightness, and integrally enhancing the display quality.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display structure and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. [0003] TFT-LCD is mainly composed of an array substrate and a color filter substrate in a box, wherein thin-film transistors and pixel electrodes arranged in a matrix are formed on the array substrate, and each pixel electrode is controlled by a thin-film transistor. When the thin film transistor is turned on, the pixel electrode is charged during the turn-on time, and after the charging is completed, the voltage of the pixel electrode will be maintained until recharging in the next scan. Generally speaking, the ...

Claims

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Application Information

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IPC IPC(8): G02F1/1362H01L27/12H01L21/84
CPCH01L27/1288H01L27/1255
Inventor 刘翔林承武陈旭谢振宇车春城
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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