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Elastic wave device, communication module, and communication apparatus

A technology of elastic wave and components, applied in the field of IDT electrodes, can solve the problems of large reflection coefficient of IDT electrodes, achieve high reliability and improve temperature characteristics

Inactive Publication Date: 2010-08-04
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the structure disclosed in Patent Document 3, the reflection coefficient of the IDT electrode is sufficiently large, and characteristic deterioration due to fluctuations occurring in resonance characteristics etc. hardly occurs

Method used

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  • Elastic wave device, communication module, and communication apparatus
  • Elastic wave device, communication module, and communication apparatus
  • Elastic wave device, communication module, and communication apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0061] [1. Structure of elastic wave element]

[0062] figure 1 The structure of the elastic wave device in Embodiment 1 is shown. exist figure 1 In the elastic wave element 1, comb-shaped IDT electrodes 13 are formed on a piezoelectric substrate 14, and SiO is formed to cover the IDT electrodes 13. 2 film12. In this embodiment, also SiO 2 The displacement adjustment film 11 is formed on the upper portion of the film 12 . The displacement adjustment film 11 is made of SiO 2 Membrane 12 is a monolayer film of a material slower than the speed of sound or SiO 2 The material of the film 12 is formed of a laminated film whose main component is a slow material. For example, the displacement adjustment film 11 is preferably made of gold (Au), silver (Ag), platinum (Pt), tantalum (Ta), copper (Cu), tungsten (W), titanium (Ti), nickel (Ni) A single-layer film of any of them or a laminated film mainly composed of any of them. In particular, since Ta and W have close proximity...

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Abstract

An elastic wave device according to the present invention includes a piezoelectric substrate (14), a comb-shaped electrode (13) arranged on the piezoelectric substrate (14), and a SiO2 layer (12) formed so as to cover the electrode (13). The elastic wave device further includes a displacement control layer (11) arranged on the SiO2 layer (12). The displacement control layer (11) is made of a material having a lower sound velocity than that of the SiO2 layer (12). With this structure, an unnecessary wave can be suppressed and temperature characteristics can be improved. In addition, when a communication module or a communication apparatus includes the elastic wave device, the reliability can be improved.

Description

technical field [0001] The present invention relates to elastic wave elements mounted in mobile communication devices (high-frequency wireless communication devices) such as mobile phone terminals, PHS (Personal Handy-phone System) terminals, and wireless LAN systems. In particular, it relates to forming comb-shaped electrodes (hereinafter referred to as IDT electrodes. IDT: Interdigital Transducer) on a piezoelectric substrate, and allowing the temperature characteristics of a surface acoustic wave device to coexist with an unnecessary wave control method. The surface acoustic wave device is covered with An insulating layer is formed in the form of the comb-shaped electrodes. In addition, it relates to a communication module and a communication device including such an elastic wave element. Background technique [0002] In duplexers and RF filters used in mobile communication systems, it is required to satisfy both a wide frequency band and good temperature characteristics...

Claims

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Application Information

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IPC IPC(8): H03H9/145H03H3/08H03H9/64
CPCH03H9/02574H03H9/14541Y10T29/42
Inventor 藁科卓松田隆志井上将吾佐藤良夫
Owner TAIYO YUDEN KK
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