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Method for preparing lead sulfide thin films with (200) preferred orientation

A preferred orientation, lead sulfide technology, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of difficult control of properties, complex preparation process, etc., and achieve low cost, simple preparation process, The effect of preparing the device is simple

Inactive Publication Date: 2010-08-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the lead sulfide films prepared by the existing lead sulfide film preparation methods are polycrystalline structures, the properties are not easy to control, and the preparation process is relatively complicated

Method used

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  • Method for preparing lead sulfide thin films with (200) preferred orientation
  • Method for preparing lead sulfide thin films with (200) preferred orientation
  • Method for preparing lead sulfide thin films with (200) preferred orientation

Examples

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Effect test

Embodiment 1

[0034] The specific implementation steps are as follows:

[0035] 1) Preparation of solution A: Weigh a certain amount of analytically pure sodium hydroxide, and prepare a 0.8M sodium hydroxide solution with deionized water. Solution A was placed in a thermostat at 30°C.

[0036] 2) Preparation of solution B: Weigh a certain amount of analytically pure lead nitrate, and prepare a 0.2M lead nitrate solution with deionized water. Solution B was placed in a thermostat at 30 °C.

[0037] 3) Preparation of solution C: Weigh a certain amount of analytically pure thiourea, and prepare a 0.2M thiourea solution with deionized water. Solution C was placed in a thermostat at 30 °C.

[0038] 4) Take a certain amount of solution A and slowly add it into a certain amount of solution B, the volume ratio of solution A and solution B is 1:1, stir evenly, and let stand for 15 minutes.

[0039]5) The substrate material is K-9 glass with a thickness of 1mm and a size of 3mm×5mm. The cleaned ...

Embodiment 2

[0049] The specific implementation steps are as follows:

[0050] 1) Preparation of solution A: Weigh a certain amount of analytically pure sodium hydroxide, and prepare a 0.3M sodium hydroxide solution with deionized water. Solution A was placed in a thermostat at 30°C.

[0051] 2) Preparation of solution B: Weigh a certain amount of analytically pure lead nitrate, and prepare a 0.05M lead nitrate solution with deionized water. Solution B was placed in a thermostat at 30 °C.

[0052] 3) Preparation of solution C: Weigh a certain amount of analytically pure grade thiourea, and prepare a 0.05M thiourea solution with deionized water. Solution C was placed in a thermostat at 30 °C.

[0053] 4) Take a certain amount of solution A and slowly add it into a certain amount of solution B, the volume ratio of solution A and solution B is 1:1, stir evenly, and let stand for 15 minutes.

[0054] 5) The substrate material is K-9 glass with a thickness of 1mm and a size of 3mm×5mm. The...

Embodiment 3

[0063] The specific implementation steps are as follows:

[0064] 1) Preparation of solution A: Weigh a certain amount of analytically pure sodium hydroxide, and prepare a sodium hydroxide solution with a concentration of 2.0 M with deionized water. Solution A was placed in a thermostat at 30°C.

[0065] 2) Preparation of solution B: Weigh a certain amount of analytically pure lead nitrate, and prepare a 0.6M lead nitrate solution with deionized water. Solution B was placed in a thermostat at 30 °C.

[0066] 3) Preparation of solution C: Weigh a certain amount of analytically pure grade thiourea, and prepare a 0.3M thiourea solution with deionized water. Solution C was placed in a thermostat at 30 °C.

[0067] 4) Take a certain amount of solution A and slowly add it into a certain amount of solution B, the volume ratio of solution A and solution B is 1:1, stir evenly, and let stand for 15 minutes.

[0068] 5) The substrate material is K-9 glass with a thickness of 1mm and ...

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Abstract

The invention provides a method for preparing lead sulfide thin films with (200) preferred orientation, which belongs to the technical field of electronic materials and relates to semiconductor optoelectronic thin films and infrared photoelectric detectors, in particular to a method for preparing the lead sulfide thin films with (200) preferred orientation of near-infrared photoelectric detectors by using chemical bath deposition. In the invention, the bicontinuous cubic phase lead sulfide thin films with (200) preferred orientation are obtained by using the chemical bath deposition, designing a preparation flow of solution of a reaction precursor, strictly controlling the initial nucleating process of the thin films and performing a subsequent high-temperature sensitizing process. The lead sulfide thin films prepared by the method have high uniformity and a light sensitive characteristic and can be used in the near-infrared photoelectric detectors. The invention has the advantages that: the whole preparation technical process is simple and easy to control; and the preparation device is simple and low in cost.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, relates to a semiconductor photoelectric thin film and an infrared photodetector, and specifically refers to a method for preparing a lead sulfide thin film with a (200) preferred orientation for a near-infrared photodetector by using a chemical bath deposition method. Background technique [0002] Lead sulfide is an important narrow-bandgap semiconductor material. Its energy band gap is 0.41eV at 300K, and it has a large exciton Bohr radius (18nm). These properties make lead sulfide semiconductor thin films unique in infrared technology. important and widely used. In the 1-3μm band, the lead sulfide infrared detector is the core device of the infrared complete system, used for infrared detection, tracking, navigation, non-contact fuze and azimuth observation system, and widely used in infrared remote sensing, infrared radiation temperature measurement, infrared security testing and...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B7/14H01L31/032H01L31/18
CPCY02P70/50
Inventor 邓宏陈金菊韦敏李国伟
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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