Variable band gap double-side transparent electrode thin film solar battery
A solar cell and transparent electrode technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as insufficient utilization of solar energy, and achieve the effect of increasing the effective power generation area, improving the photoelectric conversion efficiency, and increasing the utilization efficiency.
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Embodiment 1
[0023] Such as figure 2 As shown, the present invention discloses a thin-film solar cell with variable bandgap double-sided transparent electrodes, comprising a transparent tempered glass substrate 1, a transparent conductive ITO film 2 is arranged on the substrate, and an amorphous germanium-silicon PIN junction is arranged on the transparent conductive ITO film 2. 701, an amorphous silicon PIN junction 702 is further provided, and a transparent conductive ITO film 4 is provided on the amorphous silicon PIN junction 702. The other side of the substrate is provided with a transparent electrode ITO film 5 , a photoelectric conversion unit microcrystalline silicon PIN junction 703 is provided under the transparent electrode ITO film 5 , and a transparent conductive ITO film 6 is provided under the photoelectric conversion unit microcrystalline silicon PIN junction 703 .
[0024] In this embodiment, the amorphous silicon PIN junction 702 has a band gap of 1.8 eV and mainly absor...
Embodiment 2
[0030] Such as image 3 As shown, the present invention discloses another thin-film solar cell with variable bandgap double-sided transparent electrodes. The bandgap of the CIGS layer is arranged in a curved gradient from top to bottom in the range of 1.7ev to 1.0ev. The bandgap near the transition layer is 1.7ev, and the bandgap near the substrate is 1.0ev. A ZAO transparent conductive electrode 4 is provided above the CIGS photoelectric conversion unit 801 . On the other side of the substrate, a transparent conductive electrode 5 is firstly arranged, and an amorphous mercury cadmium telluride photoelectric conversion unit 802 is arranged on the transparent conductive electrode 5, and its bandgap distribution is a curve in the range of 1.1ev to 0.13ev from near the substrate to the light-receiving surface. Gradient arrangement, ZAO transparent conductive electrode 6 is set on 802 again.
[0031] The two photoelectric conversion units used in this embodiment all have variabl...
Embodiment 3
[0033] Such as Figure 4 As shown, the present invention discloses another kind of variable bandgap double-sided transparent electrode thin-film solar cell. Its structure is as follows. First, a transparent glass substrate 1 is arranged, and a first transparent conductive electrode 2 of ITO is arranged on the glass substrate. A microcrystalline silicon PIN junction 901 is arranged on the pole 2, a ZAO second transparent conductive electrode 4 is arranged on the microcrystalline silicon PIN junction 901, a transparent insulating layer 10 is arranged on the transparent conductive electrode, and a third ZAO transparent conductive electrode 5 is arranged on the insulating layer 10, An amorphous silicon PIN junction 902 is arranged on the transparent conductive electrode, and a ZAO fourth transparent conductive electrode 6 is arranged on the amorphous silicon PIN junction 902 .
[0034] In this embodiment, the transparent substrate is placed at the bottom of the solar cell, and the...
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