Floating body cell structure of dynamic random access memory and manufacturing technology thereof
A memory cell, dynamic random technology, applied in static memory, semiconductor/solid-state device manufacturing, digital memory information, etc., can solve the problem of difficult control of leakage current characteristics, and achieve low leakage current, low manufacturing cost, and simple manufacturing process. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0059] The device structure of the present invention will be further described below in conjunction with the accompanying drawings, which are not drawn to scale for the convenience of illustration.
[0060] Such as Figure 4 As shown, a cell structure of a high-efficiency, low-power, and highly integrated gate diode floating body DRAM based on the band-to-band tunnel penetration effect, which includes: a buried oxide layer (BOX) 100, located in the buried oxide layer The first N-type semiconductor region 201 on the 100, the P-type semiconductor region 203 positioned on the first N-type semiconductor region 201 and the gate region positioned on the P-type semiconductor region 203; one side of the P-type semiconductor region 203 is provided with The second N-type semiconductor region 202, and the second N-type semiconductor region 202 communicates with the first N-type semiconductor region 201; Shallow trench isolation regions 300 are arranged around the active region of the ac...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com