Plasma process equipment and gas distribution device thereof

Abstract

The invention discloses a gas distribution device. A plurality of first and second gas transmission channels are arranged alternately at the top of a gas distribution plate, and the gas flow directions in the first and second gas transmission channels are opposite; a plurality of gas feeding holes are arranged at the bottoms of the first and second gas transmission channels. In the first gas transmission channels, the gasflow flowing out from the gas feeding holes adjacent to the gas inlet end is greater while the gasflow flowing out from the gas feeding holes adjacent to the closed end is smaller; in the second gas transmission channels, the contrary is the case. Because the first and second gas transmission channels are arranged alternately, the total amounts of the gas fed from the plurality of adjacent gas feeding holes are substantially equal, and gas is distributed uniformly in the radial direction of the reaction chamber. The gas distribution device has the advantages of simple structure, convenient machining and low cost and ensures that the gas is distributed uniformly in the radial direction of the reaction chamber.

Description

technical field [0001] The invention relates to plasma processing technology, in particular to a gas distribution device used in plasma processing equipment. The invention also relates to a plasma processing apparatus comprising the gas distribution device described above. Background technique [0002] Plasma processing equipment is widely used in the field of microelectronics technology. [0003] Please refer to figure 1 , figure 1 It is a schematic diagram of a typical plasma processing equipment. [0004] Plasma processing equipment 1 generally includes a housing 11, in which there is a reaction chamber 12, and the top and bottom of the reaction chamber 12 are respectively provided with an upper plate 13 and a lower plate 14 correspondingly. The upper plate 13 is isolated from the casing 11 by an insulating member 15; the top of the lower plate 14 can support the workpiece to be processed. The above-mentioned processed parts shall include the substrate and other proc...

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Problems solved by technology

[0017] However, due to the need to process a large number of multi-component distribution pipes with small apertures, the processing technology is too complicated, the requirements for processing conditions are high, and the manufacturing cost is relatively high; in addition, because the process gas inlet (central pipe There is only one road), and the gas delivery volume is difficult to guarantee, which is especially prominent for large-area film formation and other processes

[0018] Therefore, the gas distribution device in the prior art is either too complicated in structure and high in processing cost; or it is difficult to obtain a high uniformity of gas distribution in the radial direction of the reaction chamber

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