Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof

A phase change material, VO2 technology, applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of high cost and harsh conditions, and achieve the effect of low cost, high repeatability and simple growth conditions

Inactive Publication Date: 2010-06-23
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Second object of the present invention is to provide the preparation method of above-mentioned material, to solve existing VO 2 The preparation method of nanomaterials has harsh conditions and high cost, and provides a new method with low cost, high repeatability and suitable for large-scale industrial production

Method used

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  • Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof
  • Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof
  • Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] a. Configure the reaction solution

[0021] 0.75g oxalic acid (C 2 h 2 o 4 ) powder was dissolved in 40ml water, stirred with a magnetic stirrer, after the powder was all dissolved, 0.25g vanadium pentoxide (V 2 o 5 ) powder, continue stirring to form an orange solution;

[0022] b. Growth of VO on silicon wafer 2 nanoflower structure

[0023] First put the cleaned silicon (100) sheet into the autoclave, then pour the above solution into a 50ml autoclave, seal the autoclave, put it into a blast drying oven, and keep the reaction at 160°C for 24 hours , after natural cooling, the composite VO on the silicon wafer was prepared 2 Nanoflower-structured phase change materials.

Embodiment 2

[0025] a. Configure the reaction solution

[0026] 0.85g oxalic acid (C 2 h 2 o 4 ) powder was dissolved in 40ml water, stirred with a magnetic stirrer, after the powder was all dissolved, 0.35g vanadium pentoxide (V 2 o 5 ) powder, continue stirring to form an orange solution;

[0027] b. Growth of VO on silicon wafer 2 nanoflower structure

[0028] First put the cleaned silicon (111) sheet into an autoclave, then pour the above solution into a 50ml autoclave, seal the autoclave, put it into a blast drying oven, and keep the reaction at 150°C for 36 hours , after natural cooling, the composite VO on the silicon wafer was prepared 2 Nanoflower-structured phase change materials.

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Abstract

The invention discloses a phase-change material for compositing VO2 nano flower structure on silicon wafer and preparation method thereof. The material thereof includes an underlay; the underlay adopts a silicon wafer; a VO2 crystal is grown on the surface of the underlay; the VO2 crystal grows along the direction vertical to the silicon underlay and is of a flower structure; the diameter of the nano flower is 10 mum and the diameter of the pedal is 2 to 3 mum. The preparation method is as follows: mixed aqueous solution of oxalic acid and vanadium pentoxide is reacted in an autoclave so as to obtain the VO2 nano flower structure. The invention has the advantages of low cost, simple growing conditions, high repeatability, safety, etc; the prepared phase-change material takes the silicon wafer as the underlay; the VO2 generated on the underlay is provided with the special nano flower structure; the material can combine the currently mature semiconductor silicon integrated circuit technique for integrating nanometer optoelectronic devices.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials, semiconductor materials and devices, in particular to a method for growing VO on a silicon substrate. 2 Phase change material with nanoflower structure and preparation method thereof. Background technique [0002] VO 2 As a thermally induced phase change compound, it will exhibit obvious metal-semiconductor phase transition characteristics at a temperature around t≈68°C in the single crystal state. When the temperature is lower than 68°C, VO 2 It is in a semiconducting state with a monoclinic crystal structure; when the temperature is higher than 68°C, VO 2 Transforms into a metallic state with a tetragonal rutile structure and a very rapid phase transition. With the occurrence of phase transition, many of its physical properties, such as the refractive index n, reflectivity R, and resistivity, all undergo sudden changes, and the magnitude of the change in resistivity can be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81C1/00B82B1/00B82B3/00
Inventor 蒋雯陶郁可倪娟朱自强
Owner EAST CHINA NORMAL UNIV
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