Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions

A thin-film material and magnetoresistance technology, applied in the manufacture/processing of electromagnetic devices, can solve problems such as unfavorable practical applications and lowering the Curie temperature of materials

Inactive Publication Date: 2011-12-07
INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, ion substitution and composite structure are the most commonly used optimization modification methods (see literature 12: P.Chen, D.Y.Xing, Y.W.Du, et al., Phys.Rev.Lett., 87, 107202(2001)) , but doping, ion substitution and material recombination all significantly reduce the Curie temperature of the material, which is not conducive to practical application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions
  • A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions
  • A method for improving and modulating the magnetoresistance of semi-metallic thin film materials by irradiation of high-energy heavy ions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0034] In this example, semi-metallic Fe 3 o 4 Nano polycrystalline film is taken as an example to illustrate the change of magnetoresistance at room temperature by using high-energy heavy ion irradiation to improve and modulate the magnetoresistance of semi-metallic film materials.

[0035] i. Semi-metallic Fe 3 o 4 The preparation of nano-polycrystalline thin film is to prepare positive fraction Fe on the glass substrate by means of spin spraying and electroless plating. 3 o 4 nano-polycrystalline film.

[0036] The specific method is: the FeCl 2 (0.01mol / L) was dissolved in deionized water to make a reaction solution, and 0.005mol / L of NaNO 2 and 0.1mol / L of CH 3 COONH 4 (pH buffer) dissolved in deionized water to make oxidation solution, adjust the pH values ​​of the two reaction solutions to 5.5 and 6.9 respectively, inject the reaction solution and oxidation solution with nitrogen gas, and put them in a closed container through two special nozzles While reacting...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for improving and modulating the magnetoresistance of a semi-metallic thin film material by irradiation with high-energy heavy ions. The measures are: (1) the film thickness of the semi-metallic thin film is controlled between 100 nanometers and 10 microns; 2) The type of irradiated heavy ion is Aq+, A is one of the elements with atomic number 10 to 92, q+ is the number of charge states stripped by the accelerator, which is: 1≤q≤A atomic number; ( 3) The energy range for irradiating heavy ions is between 100keV and 10GeV; (4) The range for irradiating heavy ions is 1010ions / cm2 to 1017ions / cm2. Through the method of the present invention, the grain insulation boundary of the semi-metallic film material represented by Fe3O4 nano-polycrystalline film can be significantly increased, the surface stress can be reduced, and a high-quality barrier layer and barrier interface can be obtained, so that its room temperature magnetic The resulting resistance is significantly increased and can be artificially modulated.

Description

technical field [0001] The invention relates to a method for improving and modulating the magnetoresistance of semi-metallic thin film materials, that is, using high-energy heavy ion irradiation to improve and modulate the magnetoresistance of Fe 3 o 4 Nano polycrystalline thin film is the representative method of magnetoresistance of semi-metallic thin film material. Background technique [0002] Magnetoresistance (MR) is defined as MR=Δρ / ρ=[ρ(0)-ρ(H)] / ρ(0), which represents the change in material resistance with and without an applied magnetic field H Rate. Generally speaking, the magnetoresistance effect can be divided into two categories: the intrinsic magnetoresistance effect and the extrinsic magnetoresistance effect. What is related to the present invention is the extrinsic magnetoresistance effect affected by the microscopic scale, showing negative magnetoresistance characteristics. [0003] As a carrier of charge, electrons can conduct current, and this property...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H10N50/01
Inventor 孙建荣王志光金运范姚存峰王瑜玉魏孔芳申铁龙缑洁臧航
Owner INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com