SOI substrate-based antifuse unit structure and preparation process thereof

Abstract

The invention relates to an SOI substrate-based antifuse unit structure and a preparation process thereof. The SOI substrate-based antifuse unit structure comprises a bulk silicon substrate and a buried layer of silicon dioxide positioned on the bulk silicon substrate, wherein the buried layer of the silicon dioxide is at least provided with an MOSFET well region and at least one lower polar plate of the antifuse; the MOSFET well region is separated from the lower polar plate of the antifuse through a silicon dioxide spacer layer; a first silicon dioxide layer, a first silicon nitride layer and a second silicon dioxide layer are grown on both of the MOSFET well region and the lower polar plate of the antifuse; the first silicon dioxide layer, the first silicon nitride layer and the secondsilicon dioxide layer respectively serve as a gate medium of the MOSFET and a high-resistance medium of the antifuse; a polycrystalline silicon layer and a silicide layer are distributed on the second silicon dioxide layer orderly; the corresponding polycrystalline silicon layer and the silicide layer on the MOSFET well region serve as the grid of the MOSEFET; the corresponding polycrystalline silicon layer and the silicide layer in a lower polar plate region of the antifuse serve as an upper polar plate of the antifuse; and the MOSFET well region is provided with a source and a drain of the MOSFET. The SOI substrate-based antifuse unit structure has the characteristics of simple process, good compatibility and good radiation resistance performance.

Description

technical field [0001] The invention relates to an anti-fuse unit structure and a preparation process, in particular to an anti-fuse unit structure and a preparation process based on an SOI substrate. Background technique [0002] Antifuse technology has been widely used today, mainly used in PROM, FPGA, PAL and other circuits based on antifuse, and is the most effective solution for one-time programming memory. The antifuse cell has a high-resistance characteristic in the unprogrammed state, with a typical value greater than 10 9 Ω, after programming, it has low-resistance characteristics, and the resistance value is generally less than 200Ω. The deeper meaning is that the anti-fuse-based devices show very good radiation resistance, which makes them well used in military and space fields. [0003] The basic structure of the antifuse unit is a sandwich structure. Both the top layer and the bottom layer are conductive plates, which can be metal, highly doped polysilicon or ...

AI Technical Summary

Problems solved by technology

[0004] Antifuse circuits based on bulk silicon, such as antifuse PROM, FPGA, etc., although antifuse memory cells have strong radiation resistance, the peripheral circuits do not have radiation resistance advantages compared with conventional circuits, so The anti-radiation advantages of the anti-fuse unit cannot be fully reflected

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