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BiFeO3 film resistor memory structure and preparation method thereof

A thin film resistor and memory technology, applied in electrical components and other directions, to achieve the effects of good density, easy control of chemical composition, and simple operation

Inactive Publication Date: 2010-06-09
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

BiFeO has not been seen in the prior art 3 Report on Switching Characteristics of Thin Film Resistors

Method used

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  • BiFeO3 film resistor memory structure and preparation method thereof
  • BiFeO3 film resistor memory structure and preparation method thereof
  • BiFeO3 film resistor memory structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1 prepares BiFeO 3 memory device

[0029] (1) Preparation of BiFeO 3 Sol: Fully mix diethanolamine with a small amount of ethylene glycol methyl ether, heat to boiling, and cool naturally to obtain mixed solution A; Fe(NO 3 ) 3 .5H 2 After O was dissolved in ethylene glycol methyl ether at room temperature, Bi(NO 3 ) 3 .9H 2 O, heated to 80 ° C for 1 h, cooled to room temperature, and mixed liquid B was obtained. At room temperature, drop the mixed solution A into the mixed solution B, adjust the concentration to 0.2mol / L, stir well for 2-4h, filter, and cool to obtain the precursor solution.

[0030] (2) Preparation of BiFeO 3 Thin film: BiFeO 3 Precursor in LaNiO 3 On the covered Si substrate, the thin film was prepared by spin coating method, and the number of layers was six. Adjust the glue-spinning parameters and time, and pretreat each layer of wet film on a hot plate. The glue-spinning parameter can be 3000 rpm, the time is 30 seconds, and ...

Embodiment 2

[0034] (1) BiFeO 3 The preparation of thin films and devices is the same as (1) and (2) of Example 1.

[0035] (2) The above BiFeO 3 The film is heat-treated at 500°C for 30 minutes at a constant temperature. In this way, well-crystallized and dense BiFeO can be obtained 3 thin film, and the absence of Bi 2 Fe 4 o 9 and other miscellaneous phases.

[0036] (3) BiFeO 3 The making of surface electrode is the same as step (4) of embodiment 1.

Embodiment 3

[0038] (1) BiFeO 3 The configuration of the solution is the same as the step (1) of Example 1.

[0039] (2) Preparation of BiFeO 3 Thin film: BiFeO 3 Precursor in clean Pt / TiO 2 / SiO 2 / Si substrate, prepare thin film by spin coating method, the number of layers is six. Adjust the glue-spinning parameters and time, and pretreat each layer of wet film on a hot plate. The glue-spinning parameter is 3000 rpm, the time is 30 seconds, and the pretreatment temperature of each layer is 350° C., and the time is 5 minutes. Repeat the glue-spinning-pretreatment-re-spinning process to get a certain thickness of BiFeO 3 Thin film (200-300nm). .

[0040] (3) BiFeO 3 The heat treatment of the film and the fabrication of the upper surface electrodes are the same as the steps (3) and (4) of Example 1.

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Abstract

The invention provides an integrated circuit comprising a BiFeO3 film resistor memory, which is characterized in that: the integrated circuit comprises a Si substrate covered by a LaNiO3 electrode, a Pt / TiO2 / SiO2 / Si substrate, a BiFeO3 film formed on the LaNiO3 and Pt base electrode, and a plurality of surface electrodes on the surface of the BiFeO3 film; and the surface electrodes comprise Pt, Au and Ag metal electrodes. The BiFeO3 film memory provided by the invention has excellent resistance switch characteristics, and the preparation process for the BiFeO3 film memory can be compatible with a CMOS process. The preparation method for the film maintains the characteristics of simple operation, low cost, easy control of chemical compositions and the like of a sol-gel method, and the prepared film has the advantages of no crack, good compactness and uniform grain distribution.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a BiFeO 3 Thin film resistive memory structure and its preparation method. Background technique [0002] At present, some oxide materials such as NiO, TiO 2 、Pr x Ca 1-x MnO3, SrZrO 3 The resistive switching characteristics, that is, the switching characteristics between two different resistance states, have attracted much attention, and the memory devices developed by using this characteristic have low operating current, low driving voltage, high stability, fast storage speed, and large storage capacity. And other technical advantages, is expected to become a new generation of non-volatile memory. [0003] However, different material systems have different storage properties and storage mechanisms. Among these materials, BiFeO 3 It is a multifunctional material with a simple perovskite structure. It has both ferroelectric order and ferromagnetic order at room tempe...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 陈心满石旺舟包定华王涛
Owner SHANGHAI NORMAL UNIVERSITY
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