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Method for growing high-quality conductive silicon carbide crystal

A silicon carbide and conductive type technology, which is applied in the field of growing high-quality conductive silicon carbide crystals, can solve the problems of limited output, high price, restricting the development of high-performance silicon carbide-based devices, etc., to increase output, reduce defects, and reduce costs. Effect

Active Publication Date: 2010-06-09
BEIJING TIANKE HEDA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, usually the growth rate of high-quality silicon carbide crystals is between 0.1-0.5mm / h, the output is limited, and the price is relatively high, which restricts the rapid development of high-performance silicon carbide-based devices

Method used

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  • Method for growing high-quality conductive silicon carbide crystal
  • Method for growing high-quality conductive silicon carbide crystal
  • Method for growing high-quality conductive silicon carbide crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Put the crucible filled with silicon carbide raw material and bonded seed crystal into the crystal growth furnace. After heating the crystal growth furnace to 300°C, vacuum the crystal growth system to 10 -3 Pa level, and then filled with a certain amount of argon, repeat this step 3 times to wash the system. After scrubbing, start crystal growth: increase the temperature of the system so that the raw material has a high evaporation temperature (2500-2700°C), and the seed crystal has a relatively low temperature (2100-2300°C); control the mixing of nitrogen and argon in the system The gas pressure was 0.01 Pa, and crystal growth was performed. After the growth, the power was turned off, and the product was cooled to room temperature with the furnace. Take out grown crystals, slice, surface process, and characterize. The growth rate of the obtained crystal was 3 mm / h. figure 2Shown the X-ray diffraction spectrum of wafer after processing, three points on wafer (cent...

Embodiment 2

[0043] Put the crucible filled with silicon carbide raw material and bonded seed crystal into the crystal growth furnace. After heating the system to 400 °C, vacuum the crystal growth system to 10 -3 Pa level, and then filled with a certain amount of argon, repeat this step 3 times to wash the system. After the scrubbing, start crystal growth: Raise the temperature of the system so that the raw material has a high evaporation temperature (2300-2500°C), and the seed crystal has a relatively low temperature (1800-2100°C); control the mixed pressure of nitrogen and argon in the system At 200Pa, crystal growth is performed. After the growth, the power was turned off, and the product was cooled to room temperature with the furnace. Take out grown crystals, slice, surface process, and characterize. The growth rate of the resulting crystal was 1.0 mm / h. Figure 4 Shown the X-ray diffraction spectrum of wafer after processing, three points on wafer (central point, central point pr...

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Abstract

The invention discloses a method for high-efficient growth of a silicon carbide crystal, which is the method for preparing the high-quality conductive silicon carbide crystal through rapid growth. The growth speed of the crystal is generally in the range of 0.1-0.5mm and the resistivity is not less than 0.025 ohm.cm during the growth process of the conductive silicon carbide crystal according to the traditional physical vapor transport method. The higher raw material temperature (2300-2700 DEG C) and the lower growth interface temperature (1800-2300 DEG C) are adopted in the method, nitrogen pressure is used for assisting the control of a growth system, the high crystal growth speed (0.6-3mm / h) can be obtained, the resistivity of the crystal can achieve 0.01 ohm.cm, and the crystallization quality of the crystal is very high. The method can realize the rapid growth of the silicon carbide crystal with high quality and low resistivity, thereby providing necessary conditions for improving the yield of the silicon carbide crystal and reducing the cost. In addition, the rapid growth of the silicon carbide crystal further has the advantages of amplifying the crystal, reducing defects of the crystal and the like.

Description

technical field [0001] The invention relates to the field of silicon carbide crystals, in particular to a method for growing high-quality conductive silicon carbide crystals. Background technique [0002] At present, the rapid development of the semiconductor industry has once again stimulated the innovation of modern science and technology. As a third-generation wide-bandgap semiconductor material, silicon carbide is superior to commonly used substrate materials in terms of thermal, electrical, and corrosion resistance, and can be widely used in the manufacture of semiconductor devices such as semiconductor lighting, microelectronics, and power electronics. According to the market report of an authoritative organization, the market size of silicon carbide wafers will reach 400 million US dollars in 2012. Therefore, major international silicon carbide wafer producers have been working hard to improve crystal quality and enlarge crystal size. In the past few decades, a vari...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B23/00
Inventor 陈小龙鲍慧强彭同华王刚刘春俊王波李龙远
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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