One-time programmable memory based on variable-resistance memory and preparation method thereof
A technology of resistive variable memory and memory, which is applied in the direction of read-only memory, static memory, information storage, etc., and can solve the problems that the one-time programming memory cannot adopt the cross-array structure and the area of the storage unit is large, so as to achieve the suppression of read crosstalk and high storage capacity. Density, cost reduction effect
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[0032] The principles and features of the present invention will be described below with reference to the accompanying drawings. The examples cited are only used to explain the present invention, and are not used to limit the scope of the present invention.
[0033] figure 2 It is a schematic diagram of the structure of the one-time programming memory based on the resistive random access memory of the present invention, image 3 It is an equivalent circuit diagram of the one-time programming memory based on the resistive random access memory of the present invention. Such as figure 2 and image 3 As shown, the one-time programming memory includes a resistive random access memory 20 with bipolar switching characteristics and a diode 10 with rectification characteristics. The resistive random access memory 20 with bipolar switching characteristics and the diode 10 with rectification characteristics are connected in series. The resistive random access memory 20 with bipolar switch...
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