3D conduction structure and manufacturing method thereof

Abstract

The invention discloses a 3D conduction structure for packages. The 3D conduction structure comprises a substrate, a first redistribution conductor, a second redistribution conductor and an insulation material. The substrate has an active surface and a passive surface which is relative to the active surface, and the substrate is provided with a welded gasket and a through hole, and the welded gasket is arranged on the active surface. The first redistribution conductor comprises a projection part and a bearing part, the projection part projects outwards from the active surface of the substrateand is electrically connected to the welded gasket; the bearing part is arranged outside the active surface and connected to the projection part, and the projection part and the bearing part form an accommodation space which is communicated with the through hole. The second redistribution conductor is arranged in the through hole and the accommodation space and in contact with the bearing part, and extends outwards from the bearing part to the passive surface. The insulation material is filled in the second redistribution conductor and the substrate as well as between the second redistribution conductor and the projection part.

Description

technical field [0001] The present invention relates to a conducting structure and a manufacturing method thereof, and in particular to a three-dimensional conducting structure and a manufacturing method thereof. Background technique [0002] Broadly speaking, System in Package (SiP) includes early multi-chip module (Multi-chip Module, MCM) technology, multi-chip packaging (Multi-chip Package, MCP) technology, chip stacking (Stack die ), PoP (Package on Package), PiP (Package in Package) and embedding active / passive components in the substrate (Embedded Substrate) and other technologies. In terms of structural appearance, MCM is a two-dimensional 2D structure, while MCP, chip stacking, PoP, PiP, etc. are three-dimensional 3D structures; because 3D structures can better meet the needs of miniaturization and high performance, so in recent years To be favored by the industry. [0003] In terms of interconnection technology (Interconnection), traditional 2D or 3D structures ar...

AI Technical Summary

Problems solved by technology

[0006] However, during the second laser drilling to form the channel 17, it is very easy to expand the hole and cause the leakage current problem

When laser drilling to the welding pad 12, the metal material (i.e. welding pad 12) will reflect or refract the laser, and the insulating material 16 adjacent to the welding pad 12 will also be burned by the laser at the same time, resulting in a large hole at the end of the channel 17 or even exposure Chip out 10

When the conductive material 18 is refilled in the channel 17, the conductive material 18 will contact the chip 10, causing the conductive material 18 that must be insulated to be electrically connected to the chip 10, which is the so-called leakage current problem.

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