Groove-type Schottky diode and manufacture method thereof
A technology of Schottky diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as fault generation and easy faults, and achieve short reverse recovery time and low reverse voltage leakage current , excellent structural effect
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[0029] See Figure 2(a) to Figure 2(o) , Is a schematic diagram of the manufacturing process of the preferred embodiment of the trench-type Schottky diode manufacturing method proposed by the present invention. As shown in Figure 2(a), first, a semiconductor substrate 30 is provided; in this embodiment, the semiconductor substrate 30 includes a silicon substrate 31 with a high doping concentration (N+ type) and a low doping concentration (N Type) epitaxial layer 32; and the low doping concentration epitaxial layer 32 is formed on the high doping concentration silicon substrate 31, and the low doping concentration epitaxial layer 32 has a certain thickness to provide the Invented the subsequent formation of the multi-trench structure (Multi-Trench) by etching.
[0030] Then, a thermal oxidation process is performed on the surface 32a of the semiconductor substrate 30, that is, the surface 32a where the epitaxial layer 32 with low doping concentration is located, and then on the s...
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