Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device for producing hydrogen through decomposing water

A hydrogen production device and water splitting technology, applied in the electrolysis process, electrolysis components, cells, etc., can solve the problems of low efficiency, not conducive to the full use of sunlight, and difficult separation of hydrogen and oxygen, so as to avoid reverse reactions and improve the utilization rate of solar energy , The effect of saving the cost of hydrogen production

Active Publication Date: 2009-12-23
ENN SCI & TECH DEV
View PDF1 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since sunlight reaches the solar cell through the photoanode of the photoelectrochemical cell, this system is not conducive to fully utilizing sunlight
[0007] Therefore, it is of great significance to develop a solar water splitting hydrogen production device that overcomes the low efficiency of semiconductor photocatalytic hydrogen production and the difficulty of separating hydrogen and oxygen, solves the cost problem of photoelectrochemical hydrogen production, and at the same time improves the utilization rate of sunlight.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for producing hydrogen through decomposing water
  • Device for producing hydrogen through decomposing water
  • Device for producing hydrogen through decomposing water

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0029] Preparation Example 1 (PEC photoanode (WO 3 Preparation of film samples))

[0030] A metal tungsten sheet with a thickness of about 1mm was placed in a tube furnace (OTF-1200X, Hefei Kejing Material Technology Co., Ltd.), and burned at 810°C for 15 minutes in an oxygen atmosphere to form a layer of tungsten on its surface. WO of about 1.5 μm 3 Oxide film, take it out for use.

preparation Embodiment 2

[0031] Preparation Example 2 (PEC photoanode (carbon-doped TiO 2 Preparation of film samples))

[0032] Carbon-doped TiO using a magnetron sputtering apparatus (Beijing Chuangshi Chengna Technology Co., Ltd.) 2 Preparation of film samples. CO in a volumetric mixing ratio of 1:5:9 2 , O 2 Fluorine tin oxide (FTO) substrates were sputtered with Ti targets in a mixed gas atmosphere of Ar and Ar. The substrate temperature was maintained at 400° C., and sputtering was performed at a power of 300 W for 2 hours, so that the thickness of the sputtered layer was 500 nm. The samples were then removed for use.

preparation Embodiment 3

[0033] Preparation Example 3 (preparation of dye-sensitized battery)

[0034] In an area of ​​9cm 2 A layer of TiO with a thickness of 2um and a particle size of 20nm was scraped on the FTO substrate 2granular layer. Then, the FTO substrate was immersed in an ethanol solution of N719 dye (Dalian Qiseguang Solar Technology Development Co., Ltd.) with a concentration of 20 mg / L, and was taken out after 24 hours to dry at room temperature. The above-treated FTO substrate was used as a photoanode. Put another area of ​​9cm 2 The FTO substrate was pulled in an aqueous solution of chloroplatinic acid with a concentration of 0.01 mole / liter using a pulling machine (TL0.01, Shenyang Kejing Equipment Manufacturing Co., Ltd.), and then heated in a muffle furnace (SX-4-10 , Tianjin Tester Instrument Co., Ltd.) for 2 hours to form a Pt layer with a thickness of 200 nm on the FTO substrate. This FTO substrate was used as a counter electrode. The dye side of the photoanode is then enc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a device for producing hydrogen through decomposing water, which comprises a photoelectrochemical cell including an optical anode and an optical cathode, and a solar cell which is used for generating voltage bias and includes an anode and a cathode, wherein the solar cell is electrically connected with the photoelectrochemical cell; the optical anode of the photoelectrochemical cell and the solar cell are arranged in the incident plane of sunshine. The device of producing hydrogen through decomposing water can overcome the problems of lower efficiency and hard hydrogen-oxygen separation during preparing hydrogen through semiconductor photocatalysis, solve the cost problem of photoelectrochemical hydrogen production, and simultaneously improve the operating factors of sunshine.

Description

technical field [0001] The invention relates to a device for decomposing water to produce hydrogen, in particular to a device for decomposing water to produce hydrogen without external bias voltage. Background technique [0002] In the past research on hydrogen production from water splitting by sunlight, there are mainly two methods, one is semiconductor photocatalytic hydrogen production, and the other is photoelectrochemical hydrogen production. [0003] Semiconductor photocatalytic hydrogen production is one of the commonly used methods for solar water splitting to produce hydrogen. It generally uses semiconductor particles with a suitable bandwidth as a carrier, and materials with high hydrogen evolution activity (such as Pt, Rh, etc.) are deposited on the semiconductor particles as a load, and then the semiconductor photocatalytic reaction is carried out under light. Semiconductor particles (such as TiO 2 , ZnO 2 etc.) have an energy band structure, generally consis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25B1/04C25B9/04
CPCY02E70/10Y02E60/366Y02E60/36Y02P20/133
Inventor 郑善亮赵伟沈晓彦周祥勇段晓菲丁哲波甘中学
Owner ENN SCI & TECH DEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com