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Thermal isolation structure of infrared detector and preparation method thereof

An infrared detector and thermal insulation technology, applied in the field of infrared detection, can solve the problems of detector surface warpage, stress mismatch, shedding, etc., achieve good stability and support effect, and overcome the problem of detector surface warpage and shedding. Effect

Inactive Publication Date: 2012-08-29
中电科技集团红外工程技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem solved by the present invention is to provide an infrared detector thermal insulation structure and its preparation method, which overcomes the defects that the existing thermal insulation structure easily causes stress mismatch and causes the surface of the detector to warp and fall off

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  • Thermal isolation structure of infrared detector and preparation method thereof
  • Thermal isolation structure of infrared detector and preparation method thereof
  • Thermal isolation structure of infrared detector and preparation method thereof

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Embodiment Construction

[0033] In order to further explain the technical means and functions adopted by the present invention to achieve the predetermined purpose, the thermal insulation structure of the infrared detector proposed by the present invention and its preparation method are described in detail below in conjunction with the accompanying drawings and examples.

[0034] The first embodiment of the present invention is such as figure 1 As shown, a method for preparing an infrared detector thermal insulation structure specifically includes the following steps: the specific process for preparing a four-pillar-supported suspended microstructure is as follows:

[0035] Step 1. Cleaning of the infrared detector substrate: After cleaning the infrared detector substrate 4 with petroleum ether, acetone, and ethanol in sequence, blow it dry with a nitrogen gun.

[0036] Step 2. Preparation of the sacrificial layer: the infrared detector substrate 4 is loaded into the magnetron sputtering equipment, an...

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Abstract

The invention discloses a thermal isolation structure of an infrared detector and a preparation method thereof. The method erodes a sacrificial layer material by a wet method, utilizes traverse etching effect of corrosive liquid, has quick reaction, and does not need opening multiple holes in the center of an image element to help removing the sacrificial layer material, so the process method is simple, can effectively relieve the problem of deformation of the image element after the removal of the sacrificial layer due to stress, and ensures the smooth surface of the infrared detector. In the thermal isolation structure, the edge of the rectangular image element is evenly provided with support posts, better stability and support effect are achieved, and the defects of warp and falling off of the surface of the detector caused by stress mismatch in the prior thermal isolation structure are overcome.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to an infrared detector thermal insulation structure and a preparation method thereof. Background technique [0002] At present, there are two types of uncooled infrared detectors, one is the traditional electrical readout uncooled infrared detector, and the other is the optical readout uncooled infrared detector. [0003] Optical readout uncooled infrared detection is an infrared detection technology based on the thermo-optic effect of materials, that is, the temperature of the detector increases due to the action of infrared radiation, which leads to changes in the optical properties of the detection material. Commercial Si CCD (Charge Coupled Device, charge-coupled device image sensor) to detect changes in its optical properties to achieve the detection of infrared radiation. Unlike traditional electrical readout uncooled infrared detectors, this optical readout uncoo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/10B81C1/00
Inventor 胡小燕孙浩梁宗久朱西安
Owner 中电科技集团红外工程技术有限公司
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