Methods of forming through-substrate interconnects

Abstract

In one embodiment of a method of forming at least one through-substrate interconnect, a semiconductor substrate (200) having first surface (202) and an opposing second substrate (204) is provided. At least one opening (210) is formed in the semiconductor substrate to extend from the first surface to an intermediate depth within the semiconductor substrate. The at least one opening is partially defined bya base (216). At least one metal-catalyst nanoparticle (220) is provided on the base. Conductive material is deposited within the at least one opening under conditiions in which the metal-catalyst nanoparticle promotes deposition of the conductive material (222). Material of the seminconductor substrate may be removed from the second surface to expose a portion of the conductive material filling the at least one opening (Figure 3K). In another embodiment, instead of using the nanoparticle, the conductive material may be selected to selectively deposit on the base partially defining the at least one opening.

Description

technical field [0001] Embodiments of the invention relate to semiconductor manufacturing. More particularly, embodiments of the invention relate to methods of forming through-substrate interconnects in a semiconductor substrate. Background technique [0002] Semiconductor devices including integrated circuits are mass-produced by fabricating hundreds or thousands of identical circuit patterns on a single semiconductor wafer or other semiconductor substrate using photolithography in combination with various other processes. In recent years, studies to increase the density of semiconductor devices in semiconductor assembly have increased. One technique for increasing the density of semiconductor devices in a semiconductor assembly is to stack multiple semiconductor substrates on top of each other. Forming through-substrate interconnects that penetrate semiconductor substrates to provide a conductive path from the active side of one semiconductor substrate to the backside of...

AI Technical Summary

Problems solved by technology

Therefore, an incompletely filled opening 156 cannot be reliably and reproducibly configured as figure 1 Shown are low-resistance through-substrate interconnects for electrically connecting active devices and / or passive components of semiconductor substrate 150 to another semiconductor stacked with semiconductor substrate 150 substrate and / or carrier substrate

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